Abstract:We experimentally investigate the microstructures and growth features of the AlN epilayers on c-Al2O3 (0001) substrates grown by ammonia-free high temperature metalorganic chemical vapor deposition (AFHT-MOCVD). Besides the conventional threading dislocations (TDs) in the AlN epilayer and the voids at the AlN epilayer/substrate interface, lattice-polarity inversion phenomenon is confirmed in the AlN growth, where laterally distributed zigzag inversion domain boundary (IDB) is observed. Lattice-polarity at different points in the AlN epilayer is directly determined by high-resolution scanning transmission electron microscope (HR-STEM). A series of the AlN morphology characterizations by scanning electron microscope (SEM) with and w/o KOH etching faithfully reproduces the lattice-polarity inversion process at the different AlN growth stages. The AlN micro-crystal with N-polarity is firstly grown on the sapphire substrate. Following, the lattice-polarity inversion process begins to appear here and there with the small Al-polar AlN trapezoid formation. With the growth in progress, an IDB formation with a laterally distributed zigzag shape is achieved due to the higher growth rates in Al-polar AlN both in vertical and lateral directions. Finally, the initially grown N-polar AlN is completely covered by the Al-polar AlN, resulting in a pure Al-polar AlN epilayer on the top. Our results in this study give deep insights to the mechanism understanding of the unique growth technique for the high quality AlN growth, which is important for the optical and the electronic device applications.

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

In Situ Spectroscopic Ellipsometry in Plasma-Assisted Molecular Beam Epitaxy of Inn under Different Surface Stoichiometries

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Growth-dependent Phonon Characteristics in InN Thin Films

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Molecular Beam Epitaxy Growth of GaN, AlN and InN

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

The Growth and Properties of an M -Plane InN Epilayer on LiAlO 2 (100) by Metal-Organic Chemical Vapor Deposition

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Epitaxial growth of high quality nonpolar InN films on LiGaO 2 substrates

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films