Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

Fabrication and Characterization of Novel Monolayer InN Quantum Wells in a GaN Matrix

Growth of Thick InN by Molecular Beam Epitaxy

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Proposal and Achievement of Novel Structure InN∕GaN Multiple Quantum Wells Consisting of 1 ML and Fractional Monolayer InN Wells Inserted in GaN Matrix

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

Hetero-epitaxial Growth and Mechanism of One-Dimensional InSb Nanostructures on GaAs Substrate by MOCVD

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

Manipulation of In(Ga)N monolayer epitaxy by MBE

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy