Abstract:The authors propose and demonstrate the fabrication of InN∕GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN∕GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors.

Proposal and Achievement of Novel Structure InN∕GaN Multiple Quantum Wells Consisting of 1 ML and Fractional Monolayer InN Wells Inserted in GaN Matrix