Abstract:We demonstrate multi-wavelength light emission from InGaN nanowires (NWs) monolithically grown on pyramid-textured Si(100) substrates by plasma-assisted molecular beam epitaxy (MBE) under stationary conditions. Taking advantage of the highly unidirectional source material beam fluxes, the In content of the NWs is tuned on the different pyramid facets due to varied incidence angle. This is confirmed by distinct NW morphologies observed by scanning electron microscopy (SEM) and by energy-dispersive X-ray (EDX) element mapping. Photoluminescence and cathodoluminescence (CL) reveal multiple lines originating from InGaN NWs on the different pyramid facets. The anomalous temperature dependence of the emission wavelength results from carrier redistribution between localized or confined states, spontaneously formed within the NWs due to composition fluctuations, verified by high-resolution EDX elemental analysis. First-principles calculations show that the pyramid facet edges act as a barrier for atom migration and enhance atom incorporation. This leads to uniform composition within the facets for not too high a growth temperature, consistent with the SEM, EDX and CL results. At elevated temperature, InGaN decomposition and In desorption are enhanced on facets with low growth rate, accompanied by Ga inter-facet migration, leading to non-uniform composition over the Ga migration length which is deduced to be around 580 nm. Our study presents a method for the fabrication of multi-wavelength light sources by highly unidirectional MBE on textured Si substrates towards color temperature-tunable solid-state lighting and RGB light-emitting diode displays.

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

From InGaN pyramids to micro-LEDs characterized by cathodoluminescence

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Luminescence Characteristics in Hexagonal and Cubic‐phase GaN on Micropatterned Si(100) Substrate