Abstract:We demonstrate multi-wavelength light emission from InGaN nanowires (NWs) monolithically grown on pyramid-textured Si(100) substrates by plasma-assisted molecular beam epitaxy (MBE) under stationary conditions. Taking advantage of the highly unidirectional source material beam fluxes, the In content of the NWs is tuned on the different pyramid facets due to varied incidence angle. This is confirmed by distinct NW morphologies observed by scanning electron microscopy (SEM) and by energy-dispersive X-ray (EDX) element mapping. Photoluminescence and cathodoluminescence (CL) reveal multiple lines originating from InGaN NWs on the different pyramid facets. The anomalous temperature dependence of the emission wavelength results from carrier redistribution between localized or confined states, spontaneously formed within the NWs due to composition fluctuations, verified by high-resolution EDX elemental analysis. First-principles calculations show that the pyramid facet edges act as a barrier for atom migration and enhance atom incorporation. This leads to uniform composition within the facets for not too high a growth temperature, consistent with the SEM, EDX and CL results. At elevated temperature, InGaN decomposition and In desorption are enhanced on facets with low growth rate, accompanied by Ga inter-facet migration, leading to non-uniform composition over the Ga migration length which is deduced to be around 580 nm. Our study presents a method for the fabrication of multi-wavelength light sources by highly unidirectional MBE on textured Si substrates towards color temperature-tunable solid-state lighting and RGB light-emitting diode displays.

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Phosphor-free White Emission from InGaN Quantum Wells Grown on in Situ Formed Submicron-Scale Multifaceted GaN Stripes

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

InGaN/GaN multi-quantum-well nanowires and light emitting

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Semipolar ( 11̅01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Semipolar ($$ 1\bar{1}01 $$) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate