Abstract:This work reports efficient full‐spectrum white light‐emitting diodes (WLEDs) excited by monolithically integrated III‐nitride structure, where trichromatic multiple quantum wells are constructed by bandgap engineering technique, allowing flexible manipulation of carrier transport. With commercial green‐red phosphor mixture, the fabricated WLEDs achieve broadband spectra with low‐ratio blue component, superior color rendering, and high luminous efficacy at different correlated color temperatures. Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III‐nitride materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full‐spectrum WLED excited by monolithically integrated III‐nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green‐red phosphor mixture, the fabricated full‐spectrum warm/cold WLEDs can emit broadband and continuous spectra with low‐ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W−1). This work demonstrates the advantages of bandgap‐engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high‐quality solid‐state lighting.

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

InGaN/GaN multi-quantum-well nanowires and light emitting

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Direct Van Deer Waals Epitaxy of Multiband-Emitting InGaN-based LEDs on Graphene for Phosphor-Free White Light Illumination

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Phosphor-free nanopyramid white light-emitting diodes grown on {} planes using nanospherical-lens photolithography

Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p -AlGaN Electron Blocking Layers

Highly linearly polarized white light emission from InGaN light-emitting diode with nanograting-integrated fluorescent ceramics

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

High Performance GaN-based Hybrid White Micro-Leds Integrated with Quantum-Dots

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Phosphor-free Micro-Pyramid InGaN-based White Light-Emitting Diode with a High Color Rendering Index on a (3-Ga2o3 Substrate

Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy