Abstract:White light emitting diodes (WLEDs) have attracted the attention of numerous scholars because of its high photoelectric conversion efficiency, low energy consumption and high reliability. They are known as the new generation of lighting energy in the twenty first century. Currently, the most common WLEDs are combined by blue LED chip and ce-doped yttrium aluminum garnet (YAG: Ce3+) yellow phosphors. The advantages are simple production, low cost and high luminous efficiency. However, WLEDs made of blue LED chip and yellow phosphors lacks red spectrum and exhibits luminescence, and its color rendering index (CRI) is low, usually only 70. At the same time, quantum dots (QDs) are considered to be the most potential materials for WLEDs color conversion layers due to their wide excitation spectrum, narrow emission spectrum, adjustable band gap and high quantum yield. In this paper, we fabricated green graphene QDs (GQDs) and red GQDs, measured and analyzed their morphology, structure and photoluminescence. The green GQDs, red GQDs and yellow phosphors were used to fabricate the WLEDs. The produced WLEDs showed excellent optical performance and working performance, among which Commission International de L 'Eclairage (CIE) chromaticity coordinates are (0.3332, 0.3359), and the correlated color temperature (CCT) is 5464 K (driving current is 30 mA). Electroluminescence (EL) spectra of the device at different currents were also measured.

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots

White LED Based on YAG : Ce,Gd Phosphor and CdSe–ZnS Core/Shell Quantum Dots

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

White Light Emitting Diodes Based on Green Graphene Quantum Dots and Red Graphene Quantum Dots

High-color-rendering-index Phosphor-Free InGaN-based White Light-Emitting Diodes by Carrier Injection Enhancement Via V-pits

High Color Rendering Index and Tunable Color Temperature of White Light Emitting Diodes with Yellow Emitting Graphene Quantum Dots Coated

White light-emitting quantum dot diodes and tuning of luminescence processes

Phosphor-free InGaN/GaN/AlGaN Core-Shell Dot-in-a-wire White Light-Emitting Diodes

High-power Phosphor-Free InGaN/AlGaN Dot-in-a-wire Core-Shell White Light-Emitting Diodes

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Phosphor-free nanopyramid white light-emitting diodes grown on {} planes using nanospherical-lens photolithography

Solid-state Fluorescent Nitrogen Doped Graphene Quantum Dots with Yellow Emission for White Light-Emitting Diodes

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Growth and properties of wide spectral white light emitting diodes

Fabrication and Optical Characteristics of Phosphor-Free InGaN Nanopyramid White Light Emitting Diodes by Nanospherical-Lens Photolithography