Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots

Di Yang,Lai Wang,Wen-Bin Lv,Zhi-Biao Hao,Yi Luo

DOI: https://doi.org/10.1109/ISLC.2014.198

2014-01-01

Abstract:Phosphor-free white light-emitting diodes consisting of InGaN/GaN green-yellow quantum dots and blue quantum wells have been grown by metal organic chemical vapor deposition. Their color-rendering index Ra was calculated up to 62.

What problem does this paper attempt to address?

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Di Yang,Lai Wang,Wen-Bin Lv,Zhi-Biao Hao,Yi Luo

DOI: https://doi.org/10.1016/j.spmi.2015.02.005

IF: 3.22

2015-01-01

Superlattices and Microstructures

Abstract:Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra. (C) 2015 Elsevier Ltd. All rights reserved.
White LED Based on YAG : Ce,Gd Phosphor and CdSe–ZnS Core/Shell Quantum Dots

Chang-yu Shen,Ke Li,Qiang-long Hou,Hua-jun Feng,Xin-yong Dong

DOI: https://doi.org/10.1109/lpt.2010.2046724

IF: 2.6

2010-01-01

IEEE Photonics Technology Letters

Abstract:Core/shell CdSe-ZnS quantum dots (QDs) with a peak emission wavelength of 618 nm and size of ~ 5.5 nm were synthesized by thermal deposition approach. High photoluminescence efficiency with a quantum yield of more than 48% has been achieved. Red-shift of a peak emission wavelength from 532 to 568 nm was realized by doping Gd3+ ions into the YAG : Ce3+ to substitute some Y3+ ions. To compensate the poor color rendering index (CRI) of the YAG : Ce-based white light-emitting diode (LED) due to the lack of red spectral component, CdSe-ZnS QDs were blended into YAG : Ce3+ , Gd3+ phosphors. Prominent spectral evolution has been achieved by increasing the content of QDs. White LED combining a blue LED with the blends of phosphor and QDs with a weight ratio of 1:1, has been demonstrated with an improved CRI value of 90.
White light-emitting diodes using blue and yellow–orange-emitting phosphors

Changyu Shen,Yi Yang,Shongzhong Jin,Jiangzhou Ming,Huajun Feng,Zhihai Xu

DOI: https://doi.org/10.1016/j.ijleo.2009.02.003

IF: 3.1

2010-01-01

Optik

Abstract:A blue-emitting phosphor, BaMgAl10O17:Eu2+ (BAM) and a yellow–orange phosphor, Ba2+-codoped Sr3SiO5:Eu2+ were prepared by the solid-state reaction. Excitation and emission spectra results showed that BAM and Ba2+-codoped Sr3SiO5:Eu2+ can be efficiently excited by near-ultraviolet (n-UV)–visible light from 250 to 440nm. The effects of the doped-Eu2+ concentration in BAM and Ba2+-codoped Sr3SiO5:Eu2+ on the photoluminescence were investigated in detail. White light-emitting diodes (LED) was obtained by combining n-UV LED chip (GaN-based 380nm emitting) with BaMgAl10O17:0.09Eu2+ and 0.1Ba2+-codoped Sr3SiO5: 0.2Eu2+ phosphors with the characteristic of color-rendering index of 86, CIE chromaticity coordinates (x,y) of (0.3216,0.3096), and color temperature Tc of 5700K. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the white LED tends to decrease. The correlated color temperature Tc increases from 4100 to 7500K and the color-rendering index Ra increases from 82 to 87 simultaneously.
An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
High Color Rendering Index and Tunable Color Temperature of White Light Emitting Diodes with Yellow Emitting Graphene Quantum Dots Coated

Jipeng Zhou,Luqiao Yin,Jianhua Zhang,Liang Wang

DOI: https://doi.org/10.1109/ifws.2017.8245965

2017-01-01

Abstract:In this work, we report the hydrothermal synthesis of yellow emitting graphene quantum dots (GQDs). The as prepared GQDs were fixed in polymer-silica hybrid matrix, deposited on InGaN blue chip and formed as transparent flexible color conversion layer of white light emitting diodes (WLED). The properties of GQDs and devices were also investigated, and we found the GQDs exhibit stable fluorescence in the ethanol solution. The as prepared GQDs WLED shows extremely high color rendering index (CRI) reaching up to 92. And in this work we realized the correlated color temperature (CCT) tunable (from 3200K to 9200K) by adjusting the thickness of GQDs color conversion layer or the concentration of GQDs solution. The color coordinates of WLEDs distribute close to the Planckian locus. These results indicate that the GQDs might be a promising candidate as yellow-emitting phosphor for white LEDs.
White Light Emitting Diodes Based on Green Graphene Quantum Dots and Red Graphene Quantum Dots

Luqiao Yin,Doudou Zhang,Weitao Li,Yameng Hu,Liang Wang,Jianhua Zhang

DOI: https://doi.org/10.1080/15421406.2021.1971850

IF: 0.7

2022-01-01

Molecular Crystals and Liquid Crystals

Abstract:White light emitting diodes (WLEDs) have attracted the attention of numerous scholars because of its high photoelectric conversion efficiency, low energy consumption and high reliability. They are known as the new generation of lighting energy in the twenty first century. Currently, the most common WLEDs are combined by blue LED chip and ce-doped yttrium aluminum garnet (YAG: Ce3+) yellow phosphors. The advantages are simple production, low cost and high luminous efficiency. However, WLEDs made of blue LED chip and yellow phosphors lacks red spectrum and exhibits luminescence, and its color rendering index (CRI) is low, usually only 70. At the same time, quantum dots (QDs) are considered to be the most potential materials for WLEDs color conversion layers due to their wide excitation spectrum, narrow emission spectrum, adjustable band gap and high quantum yield. In this paper, we fabricated green graphene QDs (GQDs) and red GQDs, measured and analyzed their morphology, structure and photoluminescence. The green GQDs, red GQDs and yellow phosphors were used to fabricate the WLEDs. The produced WLEDs showed excellent optical performance and working performance, among which Commission International de L 'Eclairage (CIE) chromaticity coordinates are (0.3332, 0.3359), and the correlated color temperature (CCT) is 5464 K (driving current is 30 mA). Electroluminescence (EL) spectra of the device at different currents were also measured.
Phosphor-free InGaN/GaN/AlGaN Core-Shell Dot-in-a-wire White Light-Emitting Diodes

Zetian Mi,Hieu Pham Trung Nguyen,Shaofei Zhang,Ashfiqua T. Connie,Md Golam Kibria,Qi Wang,Ishiang Shih

DOI: https://doi.org/10.1117/12.2041284

2014-01-01

Abstract:We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of similar to 92-98.
High-color-rendering-index Phosphor-Free InGaN-based White Light-Emitting Diodes by Carrier Injection Enhancement Via V-pits

Daisuke Iida,Zhe Zhuang,Pavel Kirilenko,Martin Velazquez-Rizo,Kazuhiro Ohkawa

DOI: https://doi.org/10.1063/5.0026017

IF: 4

2020-01-01

Applied Physics Letters

Abstract:We herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate broadband emission, the V-pit structures in the LEDs were fabricated intentionally before growing the QWs. The monolithic white LEDs emit in the range of 410–770 nm and, by tuning the injection current, can cover correlated color temperature (CCT) values corresponding to warm white, natural white, and cool white. The color-rendering index (CRI) of the white LEDs reaches 88 at an injection current of 10 mA. At an injection current of 30 mA, the white LEDs exhibit the chromaticity coordinates of (0.320 and 0.334) in the Commission Internationale de l'Eclairage 1931 chromaticity diagram, a CRI of 78, and a CCT of 6110 K.
Full-Color Inorganic Carbon Dot Phosphors For White-Light-Emitting Diodes

Zhen Tian,Xutao Zhang,Di Li,Ding Zhou,Pengtao Jing,Dezhen Shen,Songnan Qu,Radek Zboril,Andrey L. Rogach

DOI: https://doi.org/10.1002/adom.201700416

IF: 9

2017-01-01

Advanced Optical Materials

Abstract:Light-emitting carbon dots (CDots) are widely investigated due to their distinct merits. However, it is still a challenge to modulate their bandgap emissions and conquer their aggregation-induced luminescence quenching to achieve full-color highly emissive CDot-based phosphors. Herein, this study proposes an approach toward realization of full-color emissive CDots from two common precursors, citric acid and urea, through employing three different solvents (water, glycerol, and dimethylformamide) and their combinations in a solvothermal synthesis. Employing sodium silicate solution, this study further demonstrates the microwave-assisted method allowing to incorporate CDots into a silica network, which effectively prevents aggregation of CDots and results in strongly luminescent full-color inorganic CDot phosphors with photoluminescence quantum yields of 30-40%. Through deposition of the red-and green-emitting CDot phosphors on blue-emitting InGaN chips, white-light-emitting diodes are fabricated with Commission Internationale de L'Eclairage of (0.34, 0.31) and the color rendering index of 82.4, indicating their promising application for solid-state lighting.
White light-emitting quantum dot diodes and tuning of luminescence processes

Bozhi Liu,Ruifeng Li,Lian Hu,Huizhen Wu

DOI: https://doi.org/10.1007/s00339-014-8465-5

2014-01-01

Applied Physics A

Abstract:A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
High-power Phosphor-Free InGaN/AlGaN Dot-in-a-wire Core-Shell White Light-Emitting Diodes

Hieu P. T. Nguyen,Mehrdad Djavid,Steffi Y. Woo,Xianhe Liu,Qi Wang,Gianluigi A. Botton,Zetian Mi

DOI: https://doi.org/10.1117/12.2084777

2015-01-01

Abstract:We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ~ 0.3ns to ~ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ~ 60A/cm2, with a color rendering index of ~ 95.
InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Wenbin Lv,Lai Wang,Lei Wang,Yuchen Xing,Di Yang,Zhibiao Hao,Yi Luo

DOI: https://doi.org/10.7567/apex.7.025203

IF: 2.819

2014-01-01

Applied Physics Express

Abstract:InGaN quantum dot (QD) light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy using an interruption method. As the injection current density increased from 2 to 88 A/cm2, the peak electroluminescence (EL) wavelength of the LED remained almost constant at around 527 nm. The negligible blue shift indicates that the quantum-confined Stark effect induced by piezoelectric polarization is suppressed well in InGaN QDs because of strain relaxation. Temperature-dependent EL spectra measurements indicate that the capture of electrons by QDs needs further improvement because of severe electron overflow to the p-type region. In addition, the peak EL wavelength is found to be abnormally longer than the photoluminescence wavelength.
InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Yang G.F.,Zhang Q.,Wang J.,Lu Y.N.,Chen P.,Wu Z.L.,Gao S.M.,Chen G.Q.

DOI: https://doi.org/10.1016/j.revip.2016.06.001

2016-01-01

Reviews in Physics

Abstract:Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) have the advantages of simpler device process and potentially higher efficiency, and have attracted much attention in recent years. A host of technologies are emerging for implementing such white-light LEDs. Among them, the key issue is the color tuning of different emission wavelengths from InGaN/GaN MQWs with different indium (In) content. However, owing to the limited growth technology for long-wavelength InGaN/GaN MQWs with high In content, it is very attractive to study selective area epitaxy (SAE) of InGaN/GaN MQWs on GaN microstructures with non- or semipolar microfacets combined with (0001) c-plane. In this paper, we briefly review the previous developments of InGaN/GaN MQW based phosphor-free white light LEDs, then the particular technology for the growth of InGaN/GaN MQWs on the regrown GaN microfacets using SAE has been introduced, and related mechanisms for the formation of different non- or semipolar GaN microfacets fabricated by various mask patterns are discussed in detail. Furthermore, sophisticated approaches made use of the InGaN/GaN MQWs on GaN microfacets to fabricated phosphor-free white light LEDs with polychromatic emissions are reviewed.
Aqueous Synthesis of 79% Efficient AgInGaS/ZnS Quantum Dots for Extremely High Color Rendering White Light-Emitting Diodes

Zhe Hu,Hanxu Lu,Wenjie Zhou,Jinxin Wei,Hanqing Dai,Hong Liu,Zhiyong Xiong,Fengxian Xie,Wanlu Zhang,Ruiqian Guo

DOI: https://doi.org/10.1016/j.jmst.2022.06.035

2023-01-01

Abstract:Over the past few decades, I-III-VI quantum dots (QDs) have attracted considerable attention due to their large Stokes shifts, good eco-friendliness, and wide tunable emissions. In this work, a facile microwave -assisted aqueous route using glutathione (GSH) and citric acid (CA) as dual stabilizers is introduced to synthesize AgInGaS/ZnS (AIGS/ZnS) core/shell QDs. An exceptional photoluminescence quantum yield (PL QY) as high as 79% is successfully achieved, boosting the best performance of water-dispersible AIGS QDs. By varying the Ag/Ga ratio, the PL peak wavelength can be tuned from 547 to 616 nm, and luminescent hydrogel films with different colors are obtained by embedding AIGS/ZnS QDs in polyacrylamide/poly-vinyl alcohol (PAAm/PVA) hydrogels. The white light-emitting diode (WLED) with a high color rendering index (CRI) of 92.1 ( R 9 = 92.0) and a correlated color temperature (CCT) of 3022 K is fabricated using QDs-PAAm/PVA hydrogel films in combination with a blue InGaN LED chip, indicating that the as-prepared QDs are competitive color-conversion materials for WLEDs. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Light‐Emitting Diodes: High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes (Adv. Funct. Mater. 1/2016)

zhe zhuang,xu guo,bin liu,fengrui hu,yi li,tao tao,jiangping dai,ting zhi,zili xie,peng chen,dunjun chen,haixiong ge,xiaoyong wang,min xiao,yi shi,youdou zheng,rong zhang

DOI: https://doi.org/10.1002/adfm.201670008

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:On page 36, Z. Zhuang, B. Liu, R. Zhang, and co-workers demonstrate a white light-emitting diode with a novel hybrid nanohole nitride/nanocrystals structure, exhibiting high color-conversion efficiency and effective quantum yield by utilizing an efficient nonradiative energy transfer. These devices can achieve a very high color rendering index with warm white, natural white, or cold white emission, providing great prospects for mass production in future.
High-performance, environmentally friendly solid-phase color converted-based quantum dots white light-emitting diodes

Qinghua Li,Jinke Bai,Minglang Huang,Liang Li,Xiaoqing Liao,Linfeng Wang,Bing Xu,Xiao Jin

DOI: https://doi.org/10.1016/j.jlumin.2022.119560

IF: 3.6

2023-03-01

Journal of Luminescence

Abstract:Quantum dots (QDs) have been widely used in solid-phase color converter for white light-emitting diodes (WLEDs). However, further applications of these WLEDs are prevented by the limitations of the toxicity of QDs and the poor performance of devices. We herein explore highly luminescent InP/ZnS and AgInS2/ZnS core/shell QDs to solve these issues. We have synthesized high quality InP/ZnS QDs with widely tunable green emission wavelength, high PL QYs (>70%) and narrow PL peak width (∼40 nm). The prepared AgInS2/ZnS QDs achieve a wide emission coverage from 515 to 804 nm, large Stokes shift (>100 nm) and wide PL linewidth (110–160 nm) by adjusting the Ag/In content. Finally, warm-white LEDs were fabricated by combing green-emitting InP/ZnS and AgInS2/ZnS (560–690 nm) QDs with a blue GaN chip. The best WLED exhibits not only bright warm white light (correlated color temperature = 3114 K) with a maximum luminous efficacy of 75.2 lm W−1, but also excellent color quality (color rendering index Ra = 97.52, R9 = 91.5, and R13 = 99.4) and good stability.

optics
Single-phase excitation-wavelength-independent nitrogen doped graphene quantum dots for fabrication of white light-emitting diodes (WLEDs)

Yue Xu,Lubin Liu,Miaojun Xu,Wei Feng,Lili Wang,Xiaobiao Shan,Li Li Wang

DOI: https://doi.org/10.1039/d3nj03338d

IF: 3.3

2023-08-23

New Journal of Chemistry

Abstract:At present, most white light-emitting diodes (WLED)s are modulated by mixing one or more kinds of quantum dots with a certain rare earth phosphor. However, due to the limited rare earth resources, non-renewable, and expensive, it is urgent to develop a solution that does not rely on rare earths to solve the above problems. In this study, we used hydrothermal method to fabricated the nitrogen-doped graphene quantum dots (N: GQDs) using citric acid and piperazine as carbon and nitrogen source. The N: GQDs exhibited blue fluorescence in solution under UV excitation at 365 nm, while exhibits white luminescence in the solid state. The Commission Internationale de l'Enclairage coordinates and correlated color temperatures (CCTs) for the WLEDs based on N: GQDs are (0.28, 0.31) and 7469 K, respectively, and the WLED presented an outstanding color rendering index up to 92.3, which realize the preparation of LED phosphors by single quantum dots for WLED, and is promised using as backlights in lighting sources and displays.

chemistry, multidisciplinary
Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography

kui wu,tongbo wei,ding lan,xuecheng wei,haiyang zheng,yu chen,hongxi lu,kai huang,junxi wang,yi luo,jinmin li

DOI: https://doi.org/10.1063/1.4840137

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires. (C) 2013 AIP Publishing LLC.
Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Benjie Fan,Xiaoyu Zhao,Jingqiong Zhang,Yuechang Sun,Hongzhi Yang,L. Jay Guo,Shengjun Zhou

DOI: https://doi.org/10.1002/lpor.202200455

2023-01-03

Abstract:This work reports efficient full‐spectrum white light‐emitting diodes (WLEDs) excited by monolithically integrated III‐nitride structure, where trichromatic multiple quantum wells are constructed by bandgap engineering technique, allowing flexible manipulation of carrier transport. With commercial green‐red phosphor mixture, the fabricated WLEDs achieve broadband spectra with low‐ratio blue component, superior color rendering, and high luminous efficacy at different correlated color temperatures. Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III‐nitride materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full‐spectrum WLED excited by monolithically integrated III‐nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green‐red phosphor mixture, the fabricated full‐spectrum warm/cold WLEDs can emit broadband and continuous spectra with low‐ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W−1). This work demonstrates the advantages of bandgap‐engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high‐quality solid‐state lighting.

physics, condensed matter,optics, applied
High quantum-yield CdSexS1-x/ZnS core/shell quantum dots for warm white light-emitting diodes with good color rendering.

Hongyan Duan,Yang Jiang,Yugang Zhang,Dapeng Sun,Chao Liu,Jian Huang,Xinzheng Lan,Hongyang Zhou,Lei Chen,Honghai Zhong

DOI: https://doi.org/10.1088/0957-4484/24/28/285201

IF: 3.5

2013-01-01

Nanotechnology

Abstract:Composition-controllable ternary CdSexS1-x quantum dots (QDs) with multiple emission colors were obtained via a hot-injection-like method at a relatively low injection temperature (230 degrees C) in octadecene. Then highly fluorescent CdSexS1-x/ZnS core/shell (CS) QDs were synthesized by a facile single-molecular precursor approach. The fluorescent quantum yield of the resulting green (lambda(cm) = 523 nm), yellow (lambda(cm) = 565 nm) and red (lambda(cm) = 621 nm) emission of CS QDs in toluene reached up to 85%, 55% and 39%, respectively. Moreover, a QDs white light-emitting diode (QDs-WLED) was fabricated by hybridizing green-, yellow- and red-emitting CdSexS1-x/ZnS CS QDs/epoxy composites on a blue InGaN chip. The resulting four-band RYGB QDs-WLED showed good performance with CIE-1931 coordinates of (0.4137, 0.3955), an R-a of 81, and a T-c of 3360 K at 30 mA, which indicated the combination of multiple-color QDs with high fluorescence QYs in LEDs as a promising approach to obtain warm WLEDs with good color rendering.

Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

White LED Based on YAG : Ce,Gd Phosphor and CdSe–ZnS Core/Shell Quantum Dots

White light-emitting diodes using blue and yellow–orange-emitting phosphors

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

High Color Rendering Index and Tunable Color Temperature of White Light Emitting Diodes with Yellow Emitting Graphene Quantum Dots Coated

White Light Emitting Diodes Based on Green Graphene Quantum Dots and Red Graphene Quantum Dots

Phosphor-free InGaN/GaN/AlGaN Core-Shell Dot-in-a-wire White Light-Emitting Diodes

High-color-rendering-index Phosphor-Free InGaN-based White Light-Emitting Diodes by Carrier Injection Enhancement Via V-pits

Full-Color Inorganic Carbon Dot Phosphors For White-Light-Emitting Diodes

White light-emitting quantum dot diodes and tuning of luminescence processes

High-power Phosphor-Free InGaN/AlGaN Dot-in-a-wire Core-Shell White Light-Emitting Diodes

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Aqueous Synthesis of 79% Efficient AgInGaS/ZnS Quantum Dots for Extremely High Color Rendering White Light-Emitting Diodes

Light‐Emitting Diodes: High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes (Adv. Funct. Mater. 1/2016)

High-performance, environmentally friendly solid-phase color converted-based quantum dots white light-emitting diodes

Single-phase excitation-wavelength-independent nitrogen doped graphene quantum dots for fabrication of white light-emitting diodes (WLEDs)

Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

High quantum-yield CdSexS1-x/ZnS core/shell quantum dots for warm white light-emitting diodes with good color rendering.