Abstract:To address the increasing demand for multicolor light-emitting diodes (LEDs), a monolithic multicolor LED with a simple process and high reliability is desirable. In this study, organic-inorganic hybrid LEDs with violet and green wavelengths were fabricated by depositing CsPbBr3 perovskite green quantum dots (QDs) as the light-converting material on InGaN-based violet LEDs. As the injection current was increased, the total electroluminescence (EL) intensities of the hybrid LEDs increased, whereas the light-converted green emission efficiency of the CsPbBr3 QDs decreased. The maximum green-to-violet EL spectral intensity ratio of the hybrid LEDs with CsPbBr3 QDs was achieved with the injection current of <10 mA. Moreover, the EL spectral ratio of the green-to-violet emission decreased at an injection current of 100 mA. The light-conversion intensity of the CsPbBr3 QDs decreased linearly as the junction temperature of the hybrid LEDs was increased with increasing injection current, similar to the temperature-dependent photoluminescence degradation of CsPbBr3 QDs. In addition, the junction temperature of the hybrid LED was minimized by pulse injection to suppress the thermal degradation of QDs and increase the light conversion efficiency to green emission. Therefore, the overall emission spectrum color coordinates of the hybrid LEDs exhibited a red shift from violet to blue in the low-current region and a blue shift toward violet as the green emission of the QDs was decreased above 10 mA.

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Green InGaN/GaN based LEDs: high luminance and blue shift

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Green InGaN/GaN LEDs: High luminance and blue shift

White light-emitting quantum dot diodes and tuning of luminescence processes

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Polarization Of Edge Emission From Iii-Nitride Light Emitting Diodes Of Emission Wavelength From 395 To 455 Nm

Temperature Dependence of Polarized Electroluminescence Side Emission from (0001)-Oriented Blue and Violet InGaN∕GaN Light-Emitting Diodes

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Inverted V-shaped Size-Dependent Emission Wavelength Shift in InGaN Micro-Leds with Size Down to 1 Μm

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots