Abstract:The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show that the MQWs emission is spatially inhomogenous, which contain many islands like bright spots. (ii) The sizes of the bright spots are different ranging from 0.1 μm to 1μm, the LED with longer emitting wavelength has larger bright spots. (iii) The injection current dependences of the shape of the bright spots of various LEDs are different. (iv) The emission wavelengths of brighter spots are longer in the same LED. (v) Increasing the injection current, the full widths at half maximum (FWHM) of the EL spectra grow larger. With the same injection current, the green LED has larger FWHMs than the blue and purple ones. (vi) Increasing the injection current, the blue shift of the green LED is obviously (~60 meV), but those of the blue one and purple are negligible. The phenomena above suggest that, the self-organized In-rich regions play a key role in the emission of all the InGaN/GaN MQWs LEDs, though they have different influences on the emission properties of the three LEDs with various emission wavelengths. One possible explanation is that, in the blue and purple LEDs, because the size of the In-rich areas are small, the quantum confined Stark effect caused by the piezoelectric field is negligible; but in the green LED, the In-rich areas are larger, the quantum confined Stark effect is obvious which caused the blue shift phenomenon. And in all LEDs, the band filling effect makes the FWHMs of the emission spectra larger. The results also show that SNOM is a powerful tool to study the local light emission properties at nanometer scale.

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence

High Spatial Resolution Investigation of Electroluminescence of Ingan/Gan Multiple Quantum Wells by Using Scanning Near-Field Optical Microscopy and Spectroscopy

Green InGaN/GaN based LEDs: high luminance and blue shift

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Temperature Dependence of Polarized Electroluminescence Side Emission from (0001)-Oriented Blue and Violet InGaN∕GaN Light-Emitting Diodes

Green InGaN/GaN LEDs: High luminance and blue shift

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Violet Electroluminescence of AlInGaN–InGaN Multiquantum-Well Light-Emitting Diodes: Quantum-Confined Stark Effect and Heating Effect

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature