Abstract:We have constructed a versatile low-temperature scanning near-field optical microscope (LTSNOM) with the capability of near-field imaging and spectroscopy, operating at liquid nitrogen (LN) temperature. A sample is illuminated either electronically or optically by introducing a laser beam through specially designed coaxial double lenses and an optical fiber. The detected optical signal is transmitted via a fiber tip to a photoelectric multiplier tube (PMT) or a spectrometer. Shcai-force detection by using a tuning-fork technique is applied to maintain the tip-sample distance. A shear-force topographic image, an optical image and a local spectrum can be obtained simultaneously. The whole scanning head is enclosed inside a container which is immersed in liquid nitrogen in a storage Dewar during the measurement. We have used this LT-SNOM to study the electroluminescence (EL) properties of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs), at both room temperature and liquid nitrogen temperature. Low-temperature experiments with the LT-SNOM show the stability of our construction and stable image acquisition at LN temperature. The results show that at room temperature the EL intensity distribution is quite inhomogeneous with islands like bright spots, and at LN temperature the EL intensity increased dramatically and the inhomogeneity reduced greatly. Furthermore, the near-field spectra, show a peak at a higher photon energy at around 2.95 eV at low temperature, in addition to the 2.7 eV peak observed by far field at room temperature. The results indicate that the self-organized In rich regions play a key role in the EL properties of these LEDs, which act as radiation recombination centers. In conjunction with near-field spectroscopy, the possible mechanism of this phenomenon is explained in terms of irradiative recombination in the MQWs; as well as the quantum-confined Starks effect.

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Low-Temperature Scanning Near-Field Optical Microscope and Spectroscopy: Application in Quantum Well Device

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

Temperature Dependence Of The Quantum Efficiency In Green Light Emitting Diode Dies