Abstract:The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show that the MQWs emission is spatially inhomogenous, which contain many islands like bright spots. (ii) The sizes of the bright spots are different ranging from 0.1 μm to 1μm, the LED with longer emitting wavelength has larger bright spots. (iii) The injection current dependences of the shape of the bright spots of various LEDs are different. (iv) The emission wavelengths of brighter spots are longer in the same LED. (v) Increasing the injection current, the full widths at half maximum (FWHM) of the EL spectra grow larger. With the same injection current, the green LED has larger FWHMs than the blue and purple ones. (vi) Increasing the injection current, the blue shift of the green LED is obviously (~60 meV), but those of the blue one and purple are negligible. The phenomena above suggest that, the self-organized In-rich regions play a key role in the emission of all the InGaN/GaN MQWs LEDs, though they have different influences on the emission properties of the three LEDs with various emission wavelengths. One possible explanation is that, in the blue and purple LEDs, because the size of the In-rich areas are small, the quantum confined Stark effect caused by the piezoelectric field is negligible; but in the green LED, the In-rich areas are larger, the quantum confined Stark effect is obvious which caused the blue shift phenomenon. And in all LEDs, the band filling effect makes the FWHMs of the emission spectra larger. The results also show that SNOM is a powerful tool to study the local light emission properties at nanometer scale.

Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

The Origins of Double Emission Peaks in Electroluminescence Spectrum from Ingan/Gan Mqw Led

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

High Spatial Resolution Investigation of Electroluminescence of Ingan/Gan Multiple Quantum Wells by Using Scanning Near-Field Optical Microscopy and Spectroscopy

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer