Abstract:The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show that the MQWs emission is spatially inhomogenous, which contain many islands like bright spots. (ii) The sizes of the bright spots are different ranging from 0.1 μm to 1μm, the LED with longer emitting wavelength has larger bright spots. (iii) The injection current dependences of the shape of the bright spots of various LEDs are different. (iv) The emission wavelengths of brighter spots are longer in the same LED. (v) Increasing the injection current, the full widths at half maximum (FWHM) of the EL spectra grow larger. With the same injection current, the green LED has larger FWHMs than the blue and purple ones. (vi) Increasing the injection current, the blue shift of the green LED is obviously (~60 meV), but those of the blue one and purple are negligible. The phenomena above suggest that, the self-organized In-rich regions play a key role in the emission of all the InGaN/GaN MQWs LEDs, though they have different influences on the emission properties of the three LEDs with various emission wavelengths. One possible explanation is that, in the blue and purple LEDs, because the size of the In-rich areas are small, the quantum confined Stark effect caused by the piezoelectric field is negligible; but in the green LED, the In-rich areas are larger, the quantum confined Stark effect is obvious which caused the blue shift phenomenon. And in all LEDs, the band filling effect makes the FWHMs of the emission spectra larger. The results also show that SNOM is a powerful tool to study the local light emission properties at nanometer scale.

The Origins of Double Emission Peaks in Electroluminescence Spectrum from Ingan/Gan Mqw Led

Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

High Spatial Resolution Investigation of Electroluminescence of Ingan/Gan Multiple Quantum Wells by Using Scanning Near-Field Optical Microscopy and Spectroscopy

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Injection Current Dependences of Electroluminescence Transition Energy in Ingan/Gan Multiple Quantum Wells Light Emitting Diodes under Pulsed Current Conditions (vol 118, 033101, 2015)

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

Electroluminescence From The Sidewall Quantum Wells In The V-Shaped Pits Of Ingan Light Emitting Diodes

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

Growth and Device Characteristics of Nano-Folding Ingan/Gan Multiple Quantum Well Led

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Correlation Between the Structural and Cathodoluminescence Properties in Ingan/Gan Multiple Quantum Wells with Large Number of Quantum Wells

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Angular Distribution of Polarized Spontaneous Emissions and Its Effect on Light Extraction Behavior in Ingan-Based Light Emitting Diodes

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Different Exciton Behaviors in Blue and Green Wells of Dual-Wavelength Ingan/Gan Mqws Structures