Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

InGaN/AlGaN DH Green LED\+*

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

Demonstration of GaN/InGaN Light Emitting Diodes on （100） Β-Ga2o3 Substrates by Metalorganic Chemical Vapour Deposition

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Green LED Development in Polar and Non-Polar Growth Orientation

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Monolithic Semi-Polar ( 1 1 ¯ 01 ) InGaN/GaN Near White Light-Emitting Diodes on Micro-Striped Si (100) Substrate*

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs