Abstract:LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used. Nonetheless, high phase purity requires careful attention to growth conditions and the quantification of any unwanted hexagonal phase. In contrast to hexagonal GaN, in which threading dislocations are key, at its current state of maturity, the most important extended structural defects in cubic GaN are stacking faults. These modify the optical properties of cubic GaN films and propagate into active layers. In quantum wells and electron blocking layers, segregation of alloying elements at stacking faults has been observed, leading to the formation of quantum wires and polarized emission. This observation forms part of a developing understanding of the optical properties of cubic InGaN quantum wells, which also offer shorter recombination lifetimes than their polar hexagonal counterparts. There is also growing expertise in p-doping, including dopant activation by annealing. Overall, cubic GaN has rapidly transitioned from an academic curiosity to a real prospect for application in devices, with the potential to offer specific performance advantages compared to polar hexagonal material.

Green LED Development in Polar and Non-Polar Growth Orientation

HOW DO WE LOSE EXCITATION IN THE GREEN?

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Characterization of GaInN/GaN layers for green emitting laser diodes

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Development of High Power Green Light Emitting Diode Dies in Piezoelectric Gainn/Gan

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Cubic GaN and InGaN/GaN quantum wells

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Monolithic Semi-Polar ( 1 1 ¯ 01 ) InGaN/GaN Near White Light-Emitting Diodes on Micro-Striped Si (100) Substrate*

New Progress in wafer epitaxy technologies for high-brightness white LEDs

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Highly efficient optical transition between excited states in wide InGaN quantum wells

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED