Abstract:This work reports efficient full‐spectrum white light‐emitting diodes (WLEDs) excited by monolithically integrated III‐nitride structure, where trichromatic multiple quantum wells are constructed by bandgap engineering technique, allowing flexible manipulation of carrier transport. With commercial green‐red phosphor mixture, the fabricated WLEDs achieve broadband spectra with low‐ratio blue component, superior color rendering, and high luminous efficacy at different correlated color temperatures. Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III‐nitride materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full‐spectrum WLED excited by monolithically integrated III‐nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green‐red phosphor mixture, the fabricated full‐spectrum warm/cold WLEDs can emit broadband and continuous spectra with low‐ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W−1). This work demonstrates the advantages of bandgap‐engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high‐quality solid‐state lighting.

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Semipolar ( 11̅01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Semipolar ($$ 1\bar{1}01 $$) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Phosphor-free White Emission from InGaN Quantum Wells Grown on in Situ Formed Submicron-Scale Multifaceted GaN Stripes

InGaN/GaN multi-quantum-well nanowires and light emitting

Performance Enhancement of Nitrogen-Polar GaN-based Light-Emitting Diodes Prepared by Metalorganic Chemical Vapor Deposition

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

Phosphor-free Micro-Pyramid InGaN-based White Light-Emitting Diode with a High Color Rendering Index on a (3-Ga2o3 Substrate

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate