Abstract:Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm-2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV < 1 nm), scalable to 6-inch sizes. Based on the high-quality GaN epilayers, green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top, which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 107 cd/m2 (nits) is thus achieved in the green Micro-LEDs, marking the highest reported results. Furthermore, integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780, realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Color Tunable Inverted Pyramid Micro-LEDs Based on Nano-Patterned Sapphire Substrates

Phosphor-free Micro-Pyramid InGaN-based White Light-Emitting Diode with a High Color Rendering Index on a (3-Ga2o3 Substrate

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)

From InGaN pyramids to micro-LEDs characterized by cathodoluminescence

Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs

Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga2O3 substrate

High Efficiency of 5 Μm-Diameter Blue Micro-Light-Emitting Diodes

Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Enhanced Performance of InGaN Light-Emitting Diodes Via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

Optically and Electrically Invariant Multi-color Single InGaN/GaN Nanowire Light-emitting Diodes on Silicon Substrate under Mechanical Compression

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Super Flexible GaN Light Emitting Diodes Using Microscale Pyramid Arrays Through Laser Lift-off and Dual Transfer.

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Growth and Characterization of Micro-LED Based on GaN Substrate

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates