Abstract:Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm-2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV < 1 nm), scalable to 6-inch sizes. Based on the high-quality GaN epilayers, green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top, which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 107 cd/m2 (nits) is thus achieved in the green Micro-LEDs, marking the highest reported results. Furthermore, integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780, realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Growth and Characterization of Micro-LED Based on GaN Substrate

High-output power GaN-LED based on surface plasmon enhancement

Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

Ultra-low-defect Homoepitaxial Micro-Leds with Enhanced Efficiency and Monochromaticity for High-Ppi AR/MR Displays

GaN-on-Si Micro Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Active matrix monolithic micro‐LED full‐color micro‐display

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Investigation of Ultrasmall Sidewall-Insulated GaN Via with Large Aspect Ratio for the Strategy of Vertically Stacked Full-Color Micro-LEDs

Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes