Abstract:Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in highspeed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of microLED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-mu m diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on-off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZOOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 x 10(-3) and 1.88 x 10(-3) above the forward error correction (FEC) criterion of 3.8 x 10(-3), respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Parallel Micro-Led Arrays with a High Modulation Bandwidth for a Visible Light Communication

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

High Speed Gan Micro-Light-Emitting Diode Arrays for Data Communications

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Large Modulation Bandwidth GaN-based Micro-Led Arrays on Si Substrates with Graded in Composition Barriers

1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based Micro-Leds for High-Speed Visible Light Communication

Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication

C-plane Blue Micro-LED with 1.53 GHz Bandwidth for High-speed Visible Light Communication

Embedded Electrode Micro-LEDs with High Modulation Bandwidth for Visible Light Communication

1.5 Gbit/s Multi-Channel Visible Light Communications Using CMOS-Controlled GaN-Based LEDs

31.38 Gb/s GaN-based LED Array Visible Light Communication System Enhanced with V-pit and Sidewall Quantum Well Structure

Visible-Light Communications Using A Cmos-Controlled Micro-Light-Emitting-Diode Array

10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-Led