Abstract:Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence. Microscale perovskite quantum dot light‐emitting diodes (micro‐PeLEDs) are fabricated through an “interface engineering‐inkjet printing‐plasma etching” strategy using perovskite quantum dot arrays as the emissive layer for full‐color displays with the advantages of low cost, free massive transfer, high resolution, and suitability for large‐area or flexible displays. This provides a new approach for the development of micro‐LEDs.

Active matrix monolithic micro‐LED full‐color micro‐display

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers

P‐9.14: High transparent Active matrix Mini‐LED Full Color Display with IGZO TFT Backplane

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

Monolithic Full-Color Micro-LED Displays Featuring Three-Dimensional Chip Bonding and Quantum Dot-Based Color Conversion Layer

3400 PPI Active-Matrix Monolithic Blue and Green Micro-LED Display

A Full-Color Micro LEDs Display Based on IGZO TFT

A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

Extremely high pixel density color conversion micro-LED displays with high efficiency and wide color gamut coverage

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display

18.4: Full‐Color Active‐matrix Mini‐LED Display based on Novel Color Conversion Technology

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

16‐2: A 4‐inch Full Color Active‐matrix Mini‐LED Display Based on 0408 Chip and 500um Pixel

Full-color micro-LED displays with cadmium-free quantum dots patterned by photolithography technology

Full-Color Realization of Micro-LED Displays

Microfluidics-based quantum dot color conversion layers for full-color micro-LED display

Transfer-printed, tandem microscale light-emitting diodes for full-color displays