Abstract:Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence. Microscale perovskite quantum dot light‐emitting diodes (micro‐PeLEDs) are fabricated through an “interface engineering‐inkjet printing‐plasma etching” strategy using perovskite quantum dot arrays as the emissive layer for full‐color displays with the advantages of low cost, free massive transfer, high resolution, and suitability for large‐area or flexible displays. This provides a new approach for the development of micro‐LEDs.

Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Active matrix monolithic micro‐LED full‐color micro‐display

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Full-color micro-LED displays with cadmium-free quantum dots patterned by photolithography technology

Microfluidics-based quantum dot color conversion layers for full-color micro-LED display

Monolithic Full-Color Micro-LED Displays Featuring Three-Dimensional Chip Bonding and Quantum Dot-Based Color Conversion Layer

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut

18.4: Full‐Color Active‐matrix Mini‐LED Display based on Novel Color Conversion Technology

Inkjet Printed Quantum Dots Color Conversion Layers for Full-Color Micro-LED Displays

P‐10.3: The full‐color display Micro‐LEDs based on quantum dots photolithography

A Full-Color Micro LEDs Display Based on IGZO TFT

Quantum Dot Film Patterning on a Trenched Glass Substrate for Defining Pixel Arrays of a Full-color Mini/Micro-LED Display

Application of InP Quantum Dot film by Photolithography Technology on a Micro-LED Display

InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays

21‐2: The full‐color Micro‐LEDs display based on quantum dots

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots