Abstract:As the field of state-of-the-art displays continues to evolve, micro light-emitting diodes (Micro-LEDs) with their diminutive pixel size and exceptional efficiency are emerging as a pivotal player. It is essential for displays to achieve the highest possible efficiency under low current injection. Through the investigation of Micro-LEDs incorporating various quantum structures, we have exhibited remarkable enhancement of their optoelectronic properties at low current injection. The optimized InGaN/GaN Micro-LED structure, incorporating a 2-nm-thick quantum well (QW) and a 6-nm-thick quantum barrier (QB), demonstrated superior photonic performance at current densities ranging from 0.1 to 10 A/cm2. It is discovered that the electron–hole wave function overlap can be enhanced by thinning the InGaN QW, thereby increasing radiation efficiency. Meanwhile, uniform carrier distribution and reduced quantum confinement stark effect (QCSE) in QWs can be achieved by a thinner GaN barrier, resulting in more uniform luminescence at each QW in multiple QWs (MQWs). The optimized Micro-LEDs devices exhibit uniform emission and remarkably high brightness, making them a suitable emission source to be combined with quantum dots (QDs) for the realization of full-color displays. Convincing results proved that optimized Micro-LEDs array can serve as the solution for high-resolution and brightness displays.

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Full-color micro-LED displays with cadmium-free quantum dots patterned by photolithography technology

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

High performance color‐converted micro‐LED displays

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Transfer-printed, tandem microscale light-emitting diodes for full-color displays

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

Microfluidics-based quantum dot color conversion layers for full-color micro-LED display

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

92‐1: Invited Paper: Wide‐Color‐Gamut and Stable MicroLED Displays Using UV‐Pumped Cd‐Free Quantum Dots

18.4: Full‐Color Active‐matrix Mini‐LED Display based on Novel Color Conversion Technology

Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift

Monolithic Full-Color Micro-LED Displays Featuring Three-Dimensional Chip Bonding and Quantum Dot-Based Color Conversion Layer