Abstract:A strain modulation strategy to expanse the surface lattice of the GaN epilayer and thus enhancing the indium incorporation in InGaN multiple quantum wells is proposed. High‐efficiency InGaN red mini‐light emitting diode (LED) chip with external quantum efficiency value up to 7.4% and full‐color nitride mini‐LED display are demonstrated. The results provide a convenient solution to accelerate the development of full‐color mini/micro‐LED displays. InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of InGaN LEDs drops rapidly as the emission spectra go from blue/green to red range due to the poor quality of high‐indium‐content InGaN materials. Here, high‐performance InGaN red LEDs on sapphire grown by metal–organic chemical vapor deposition through strain modulation are reported. A composite buffer layer is proposed to increase the surface lattice constant of GaN and hence successfully enhances the indium incorporation efficiency of the following InGaN active layers. Consequently, a high‐efficiency InGaN red mini‐LED chip (mesa area: 100 × 200 μm2) with a peak wavelength of 629 nm and an external quantum efficiency of 7.4% is realized. Finally, a full‐color nitride mini‐LED display panel with 74.1% coverage of Rec.2020 color gamut by using the InGaN red mini‐LED chips is fabricated. The study signifies the great potentials of full‐nitrides high‐resolution full‐color mini/micro‐LED displays.

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Red, green and blue InGaN micro-LEDs for display application: temperature and current density effects

The Performance of InGaN-based Red/green Micro-Leds

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

Study on the effect of size on InGaN red micro-LEDs

InGaN-based RGB Micro-Led Arrays

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

True‐Red InGaN Light‐Emitting Diodes for Display Applications

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Investigation of InGaN-based red/green micro-light-emitting diodes

Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Green InGaN/GaN based LEDs: high luminance and blue shift

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*