Abstract:The microdisplays for augmented reality and virtual reality require ultrasmall micro light-emitting-diodes (μLEDs) with a dimension of ≤5 μm. Furthermore, the microdisplays also need three kinds of such μLEDs each emitting red, green, and blue emission. Currently, in addition to a great challenge for achieving ultrasmall μLEDs mainly based on III-nitride semiconductors, another fundamental barrier is due to an extreme difficulty in growing III-nitride-based red LEDs. So far, there has not been any effective approach to obtain high indium content InGaN as an active region required for a red LED while maintaining high optical performance. In this paper, we have demonstrated a selective epitaxy growth approach using a template featuring microhole arrays. This allows us to not only obtain the natural formation of ultrasmall μLEDs but also achieve InGaN with enhanced indium content at an elevated growth temperature, at which it is impossible to obtain InGaN-based red LEDs on a standard planar surface. By means of this approach, we have demonstrated red μLEDs (at an emission wavelength of 642 nm) with a dimension of 2 μm, exhibiting a high luminance of 3.5 × 10<sup>7</sup> cd/m<sup>2</sup> and a peak external quantum efficiency of 1.75% measured in a wafer form (i.e., without any packaging to enhance an extraction efficiency). In contrast, an LED grown under identical growth conditions but on a standard planar surface shows green emission at 538 nm. This highlights that our approach provides a simple solution that can address the two major challenges mentioned above.

True‐Red InGaN Light‐Emitting Diodes for Display Applications

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

MOVPE-grown InGaN Quantum-Well Red Micro-Leds

InGaN-based RGB Micro-Led Arrays

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

InGaN Quantum Dots for Micro-Leds

High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays

A red-emitting micrometer scale LED with external quantum efficiency >8%