Abstract:The microdisplays for augmented reality and virtual reality require ultrasmall micro light-emitting-diodes (μLEDs) with a dimension of ≤5 μm. Furthermore, the microdisplays also need three kinds of such μLEDs each emitting red, green, and blue emission. Currently, in addition to a great challenge for achieving ultrasmall μLEDs mainly based on III-nitride semiconductors, another fundamental barrier is due to an extreme difficulty in growing III-nitride-based red LEDs. So far, there has not been any effective approach to obtain high indium content InGaN as an active region required for a red LED while maintaining high optical performance. In this paper, we have demonstrated a selective epitaxy growth approach using a template featuring microhole arrays. This allows us to not only obtain the natural formation of ultrasmall μLEDs but also achieve InGaN with enhanced indium content at an elevated growth temperature, at which it is impossible to obtain InGaN-based red LEDs on a standard planar surface. By means of this approach, we have demonstrated red μLEDs (at an emission wavelength of 642 nm) with a dimension of 2 μm, exhibiting a high luminance of 3.5 × 10<sup>7</sup> cd/m<sup>2</sup> and a peak external quantum efficiency of 1.75% measured in a wafer form (i.e., without any packaging to enhance an extraction efficiency). In contrast, an LED grown under identical growth conditions but on a standard planar surface shows green emission at 538 nm. This highlights that our approach provides a simple solution that can address the two major challenges mentioned above.

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

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True‐Red InGaN Light‐Emitting Diodes for Display Applications

The Performance of InGaN-based Red/green Micro-Leds

A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Investigation of InGaN-based red/green micro-light-emitting diodes

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

InGaN-based RGB Micro-Led Arrays

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

Study on the effect of size on InGaN red micro-LEDs

MOVPE-grown InGaN Quantum-Well Red Micro-Leds

Effects of Size on the Electrical and Optical Properties of InGaN-based Red Light-Emitting Diodes

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2