Abstract:GaN-based micro-light-emitting diodes (micro-LEDs) are critical for lighting and display applications due to their high efficiency and stability. However, it has been a challenge to alleviate the reduction of the external quantum effect (EQE) of micro-LEDs with a decreasing size. This is attributed to an increase in the Shockley-Read-Hall (SRH) nonradiative recombination rate of the sidewall. Due to the size effects, it is more difficult to prepare efficient micro-LEDs with decreasing mesa size. In this work, micro-LED epi-wafers with InGaN quantum dots (QDs) as active layer materials were grown by plasma-assisted molecular beam epitaxy (PA-MBE), and full-M-sided hexagonal structure micro-LEDs were prepared. We fabricated the micro-LED array with the full-M-sided hexagonal structure and repaired etching damage on the sidewall by chemically treating with a tetramethylammonium hydroxide (TMAH) solution. Most of the surface defects caused by etching were eliminated, and the etching damage can be further reduced by using QDs as an active region. Thus, the efficiency of the micro-LED at a low injection current density is improved, and the size effect is eventually overcome. Compared with the 20 mu m micro-LED array, the peak EQE of the 10 mu m micro-LED array was improved by 79%, reaching 0.83% at 11 A/cm(2). We demonstrate that constructing full-M-sided structures can overcome the size effect in InGaN QD-based micro-LEDs. Notably, the cyan-green micro-LEDs fabricated by this method exhibited low efficiency drop. In addition, the QD-based micro-LED exhibits excellent wavelength stability with increasing injection current density. This work provides a new way to fabricate high-efficiency micro-LEDs.

Study on the effect of size on InGaN red micro-LEDs

Inverted V-shaped Size-Dependent Emission Wavelength Shift in InGaN Micro-Leds with Size Down to 1 Μm

Effects of Size on the Electrical and Optical Properties of InGaN-based Red Light-Emitting Diodes

Size effects of AlGaInP red vertical micro-LEDs on silicon substrate

Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: high pixel density arrays demonstration

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

The Size-Dependent Photonic Characteristics of Colloidal-Quantum-Dot-Enhanced Micro-LEDs

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Aging Characteristics of Blue InGaN Micro-Light Emitting Diodes at an Extremely High Current Density of 3.5 Ka Cm−2

Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

High-efficiency micro-LED displays with indistinguishable color shift

Investigation of InGaN-based red/green micro-light-emitting diodes

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study