Abstract:Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density. Synopsis : The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Degradation Behaviors of High Power Gan-Based Blue Light Emitting Diodes

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Growth and Characterization of Micro-LED Based on GaN Substrate

Operating Behavior of Micro-Leds on a GaN Substrate at Ultrahigh Injection Current Densities

Study on the effect of size on InGaN red micro-LEDs

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

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High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Efficiency Droop Behavior of Direct Current Aged GaN-based Blue Light-Emitting Diodes

Study on the Stability of the High‐brightness White LED

Different Degradation Behaviors of Ingan/Gan Mqws Blue and Violet Leds

The Electroluminescence Spectra of InGaN/GaN Blue LEDs During Aging Ti Me