Abstract:We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes (LEDs) and developed some optimization strategies. Our aim is to increase the optical performance of LEDs at low current density (0.02–2 A cm−2) for micro-LEDs used in display applications. First, we investigated the effects of quantum well (QW) number in blue In0.225Ga0.775N/In0.10Ga0.90N LEDs. We found that at low current density LEDs with lower QW number have much higher internal quantum efficiency (IQE) than those with higher QW number. Second, we also numerically investigated the effects of the electron blocking layer, n-side quantum barrier (QB) doping concentration, QB material and QW width with single quantum well (SQW) structure. For SQW LEDs at low current density, the electron injection efficiency was nearly one. In terms of the QB doping concentration, we found that an appropriate n-side QB doping can ensure Shockley-Read-Hall recombination appropriately equal Auger recombination, which ultimately results in high IQE. For QB material, we choose In0.05Ga0.95N as QB material to achieve both high IQE and low forward voltage. Regarding the QW width, we found that although LEDs with wide QW had high IQE, there were also two peaks in the electroluminescence (EL) spectrum, thus 3 nm was used as an optimal QW width. The original 5-QW structure showed a lower IQE range from 50 to 80% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 3.06 V at 1 A cm−2. In contrast, our optimized LED structure achieved an IQE of 92.3% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 2.72 V at 1 A/cm2.

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Degradation Behaviors of High Power Gan-Based Blue Light Emitting Diodes

Research on the Reliability of GaN-based Violet LED

Study of Defect Density and Aging Properties of GaN LEDs

Study on Aging Properties of GaN LEDs Based on the Measurement of Nonradiative Recombination Defect Density

Effects of Junction Temperature and Its Variations on the Performance of GaN‐based High Power Flip‐chip LEDs

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes

Study on the Stability of the High‐brightness White LED

On the Temperature Dependence of Electron Leakage from the Active Region of Gainn/Gan Light-Emitting Diodes

Optical Characterization of Light-Emitting Diodes Fabricated with Vertical and Flip-Chip Structure

Temperature‐dependent Ac Current‐voltage‐capacitance Characteristics of GaN‐based Light‐emitting Diodes under High Forward Bias

Degradation mechanism beyond device self-heating in high power light-emitting diodes

The Electroluminescence Spectra of InGaN/GaN Blue LEDs During Aging Ti Me

High Power InGaN/GaN MQWs Blue LED with AlGaN/GaN Blocking Layers

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Efficiency Droop Behavior of Direct Current Aged GaN-based Blue Light-Emitting Diodes

Analysis of the Changes of LEDs Characteristics Before and After ESD Shock