Abstract:The thermal properties, including thermal time constants, of GaInN light-emitting diodes (LEDs) and laser diodes (LDs) are analyzed. The thermal properties of unpackaged LED chips are described by a single time constant, that is, the thermal time constant associated with the substrate. For unpackaged LD chips, we introduce a heat-spreading volume. The thermal properties of unpackaged LD chips are described by a single time constant, that is, the thermal time constant associated with the heat spreading volume. Furthermore, we develop a multistage RthCth thermal model for packaged LEDs. The model shows that the transient response of the junction temperature of LEDs can be described by a multiexponential function. Each time constant of this function is approximately the product of a thermal resistance, Rth, and a thermal capacitance, Cth. The transient response of the junction temperature is measured for a high-power flip-chip LED, emitting at 395 nm, by the forward-voltage method. A two stage RthCth model is used to analyze the thermal properties of the packaged LED. Two time constants, 2.72 ms and 18.8 ms are extracted from the junction temperature decay measurement and attributed to the thermal time constant of the LED GaInN/sapphire chip and LED Si submount, respectively.

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

On the Temperature Dependence of Electron Leakage from the Active Region of Gainn/Gan Light-Emitting Diodes

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Forward leakage currents in GaN p-i-n diodes

Analysis of Thermal Properties of GaInN Light-Emitting Diodes and Laser Diodes

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Microanalyses of the Reverse-Bias Leakage Current Increase in the Laser Lift off GaN-based Light Emitting Diodes

Forward Tunneling Current in Gan-Based Blue Light-Emitting Diodes

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Temperature‐dependent Ac Current‐voltage‐capacitance Characteristics of GaN‐based Light‐emitting Diodes under High Forward Bias

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations