Abstract:Finite element simulation model of a GaN‐LED operating in noncarrier injection mode is established. It is found that the luminescence output of the NCI‐LED is highly sensitive to doping concentrations, and reducing the multiquantum wells number can increase the probability of interband tunneling so as to improve the luminescence intensity. The highest luminescence intensity occurs in the device with a single quantum well. Noncarrier injection (NCI) operation mode is an emerging driving mode for nanoscale light‐emitting diodes (LEDs) for application in nanopixel light‐emitting displays. However, the luminescence intensity of the NCI‐LED with traditional epitaxial structure is relatively low because of the absence of external carrier injection. Therefore, improving the luminescence intensity by optimizing the epitaxial structure of the LED is an important technical measure. In this work, the tunneling behavior of the NCI‐LED under reverse bias, which plays a key role in increasing the luminescence intensity, is studied through modeling and simulation. The dynamic variation of carrier concentration in each voltage cycle is studied to explore the working process of the NCI‐LED. Results show that the luminescence output of the NCI‐LED is highly sensitive to doping concentrations, and reducing the number of multiquantum wells can increase the probability of interband tunneling so as to improve dramatically the carrier number contributing to luminescence. This simulation work can deepen the understanding of the NCI mode and serve as an important guidance for the rational design of the NCI‐LEDs.

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Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Forward Tunneling Current in Gan-Based Blue Light-Emitting Diodes

Trap-assisted Tunneling As Possible Carrier Escape Mechanism in InGaN/GaN Light-Emitting Diodes

Forward leakage currents in GaN p-i-n diodes

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Temperature‐dependent Ac Current‐voltage‐capacitance Characteristics of GaN‐based Light‐emitting Diodes under High Forward Bias

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes

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On the Reverse Gate Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT