Abstract:Barrier height and Ideality factor of Ni/n-GaN Schottky diodes are measured by performing temperature dependent current-voltage measurements. The measured value of barrier height is found to be much smaller than the theoretically calculated Schottky-Mott barrier height for the Ni/n-GaN diodes. Furthermore, a high value of ideality factor (>2) is measured at low temperatures. In order to understand these results, we need to consider a double Gaussian distribution of barrier height where the two components are related to the thermionic emission and thermionic filed emission mediated by dislocation-assisted tunnelling of carriers across the Schottky barrier. Thermionic emission is seen to dominate at temperatures higher than 170 K while the dislocation-assisted tunnelling dominates at low temperatures. The value of characteristic tunnelling energy measured from the forward bias current-voltage curves also confirms the dominance of dislocation-assisted tunnelling at low temperatures which is strongly corroborated by the Hall measurements. However, the value of characteristic tunnelling energy for high temperature range cannot be supported by the Hall results. This discrepancy can be eliminated by invoking a two layer model to analyse the Hall data which confirms that the charged dislocations, which reach the sample surface from the layer-substrate interface, provide an alternate path for the transport of carriers. The dislocation-assisted tunnelling of carriers governs the values of Schottky diode parameters at low temperature and the same is responsible for the observed inhomogeneity in the values of barrier height. The present analysis is applicable wherever the charge transport characteristics are severely affected by the presence of a degenerate layer at GaN-Sapphire interface and dislocations lines pierce the Schottky junction to facilitate the tunnelling of carriers.

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Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Forward leakage currents in GaN p-i-n diodes

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop

Origin of Leakage Current in Vertical GaN Devices with Nonplanar Regrown P-Gan

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode