Abstract:AIP Advances, Volume 12, Issue 6, June 2022. The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance (Ron,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

Comprehensive device modeling for AlGaN/GaN based Schottky barrier diodes with beveled p-GaN termination to control electric field

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode*

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

Analytical Design and Modelling of GaN Vertical Trench Junction Barrier Schottky Diodes

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

Deep-Level Defects Induced Degradation of Negative Differential Resistance in GaN-Based Resonant Tunneling Diodes

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Vertical power diodes based on bulk GaN substrates

Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface