Abstract:The effects of different substrates on the off-state leakage current in gallium nitride (GaN) planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current–voltage characteristics. The two devices exhibit different leakage mechanisms despite being subjected to the same process conditions. The device with a sapphire substrate shows a more intricate leakage mechanism, implying the presence of additional leakage channels compared to the device with free-standing substrates. The electrical leakage characteristics in the planar GaN-on-sapphire device (referred to as utemp-SBD) and GaN substrate device (referred to as usub-SBD) Schottky barrier diodes (SBD) can be described by two distinct processes as the reverse bias gradually increases: utemp-SBD go through the thermionic emission (TE), variable range hopping (VRH), Frenkel–Poole (FP) emission and space-charge-limited conduction (SCLC) model; The leakage conduction mechanism of usub-SBD include TE, VRH, and FP emission mechanisms. It is noteworthy that in device 1, there is a rapid increase in leakage current within the voltage range of −36 to −40 V, primarily driven by the SCLC mechanism. This effect arises due to the presence of intrinsic traps in GaN grown on a heterogeneous substrate. Additionally, in the voltage range of −7 to −50 V (348 K to 448 K), the leakage mechanism shifts from FP emission to the VRH model, possibly due to variations in the Schottky barrier height.This study provides an in-depth analysis of the leakage mechanisms observed on different substrates and offers valuable insights for the design of planar gate transistors to minimize or avoid the occurrence of leakage channels.

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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

The Leakage Current Mechanisms in the Schottky Diode with a Thin Al Layer Insertion Between Al 0.245 Ga 0.755 N/GaN Heterostructure and Ni/Au Schottky Contact

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers