Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

Xiao Wang,Zhi-Yu Lin,Yu-Min Zhang,Guo-Qiang Ren,Ke Xu

2023-07-25

Abstract:The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.

Applied Physics

What problem does this paper attempt to address?

Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

Xiao Wang,Zhi-Yu Lind,Yu-Min Zhang,Jian-Feng Wang,Ke Xu

DOI: https://doi.org/10.1016/j.rinp.2023.106933

IF: 4.565

2023-09-18

Results in Physics

Abstract:The effects of different substrates on the off-state leakage current in gallium nitride (GaN) planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current–voltage characteristics. The two devices exhibit different leakage mechanisms despite being subjected to the same process conditions. The device with a sapphire substrate shows a more intricate leakage mechanism, implying the presence of additional leakage channels compared to the device with free-standing substrates. The electrical leakage characteristics in the planar GaN-on-sapphire device (referred to as utemp-SBD) and GaN substrate device (referred to as usub-SBD) Schottky barrier diodes (SBD) can be described by two distinct processes as the reverse bias gradually increases: utemp-SBD go through the thermionic emission (TE), variable range hopping (VRH), Frenkel–Poole (FP) emission and space-charge-limited conduction (SCLC) model; The leakage conduction mechanism of usub-SBD include TE, VRH, and FP emission mechanisms. It is noteworthy that in device 1, there is a rapid increase in leakage current within the voltage range of −36 to −40 V, primarily driven by the SCLC mechanism. This effect arises due to the presence of intrinsic traps in GaN grown on a heterogeneous substrate. Additionally, in the voltage range of −7 to −50 V (348 K to 448 K), the leakage mechanism shifts from FP emission to the VRH model, possibly due to variations in the Schottky barrier height.This study provides an in-depth analysis of the leakage mechanisms observed on different substrates and offers valuable insights for the design of planar gate transistors to minimize or avoid the occurrence of leakage channels.

physics, multidisciplinary,materials science
Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Yong Lei,Hai Lu,Dongsheng Cao,Dunjun Chen,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1016/j.sse.2013.01.007

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:In this work, Schottky barrier diodes with vertical geometry were fabricated on low-defect-density homoepitaxial GaN for studying the reverse leakage mechanism of GaN-based Schottky contact. A leakage current model based on electron transmission primarily through linear defects like dislocations was suggested to explain the reverse current-voltage characteristics measured between 300 and 410 K, in which electrons from contact metal overcome the locally height-reduced Schottky barrier through thermionic-field emission. (C) 2013 Elsevier Ltd. All rights reserved.
Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Weiyi Jin,Yumin Zhang,Songyuan Xia,Qizhi Zhu,Yuanhang Sun,Juemin Yi,Jianfeng Wang,Ke Xu

DOI: https://doi.org/10.1063/5.0208706

IF: 1.697

2024-01-01

AIP Advances

Abstract:This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.
Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

Jianxun Dai,Huimin Yu,Huolin Huang,Taisen Ye,Yun Lei,Nan Sun,Dawei Li,Hao Zheng,Hui Huang,Yung C. Liang

DOI: https://doi.org/10.1063/5.0188134

IF: 4

2024-05-13

Applied Physics Letters

Abstract:In GaN Schottky barrier diodes (SBD), there is a trade-off between the turn-on voltage and the leakage current. In this study, recess-free 4 nm-thin-barrier AlGaN/GaN SBDs with minimal leakage current as well as excellent turn-on voltage homogeneity are developed, which enable better electrical control to pinch off the 2DEG channel under the anode region and avoids trap introduced in the barrier etching process. In detail, the effect of reverse stress on the SBD performance is initially explored by using differential conductance, and then, the anode-to-cathode distances and temperatures dependence of SBDs output characteristics are systematically studied. The fabricated thin-barrier GaN SBDs show a turn-on voltage of ∼0.75 V and a low level leakage current of 9.66 × 10−10 (1.91 × 10−8) A/mm at 300 (423) K, which is among the lowest reported values at the comparable reverse bias voltage and temperature. Moreover, structure parameters of the thin-barrier AlGaN/GaN SBD are systematically modeled and optimized by the TCAD simulations, including anode metal work function, Al mole fraction, the anode-to-cathode distance, and slanted anode angle. The introduction of slanted anode is found to have significant effect on the improvement of reverse breakdown voltage and leakage current characteristics.

physics, applied
Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Jiabo Chen,Zhihong Liu,Haiyong Wang,Xiufeng Song,Zhaoke Bian,Xiaoling Duan,Shenglei Zhao,Jing Ning,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.35848/1882-0786/ac2260

IF: 2.819

2021-01-01

Applied Physics Express

Abstract:Temperature-dependent current–voltage characteristics was measured to investigate leakage conduction mechanisms in GaN-on-Si quasi-vertical Schottky barrier diode. At low reverse bias, thermionic emission is dominated. At voltage range from −1 to −20 V, variable range hopping (VRH) is main leakage current mechanism at low temperatures (298–373 K), while at high temperatures (498–573 K), electrons gain enough energy and emit into the trapped states, Frenkel–Poole emission becomes dominant. At a relatively high voltage range, the increased electric field promotes the electron hopping along the threading dislocation in the bulk GaN layers, and VRH becomes the main current mechanism at whole measured temperature range (298–573 K).
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Xiaolu Guo,Yaozong Zhong,Xin Chen,Yu Zhou,Shuai Su,Shumeng Yan,Jianxun Liu,Xiujian Sun,Qian Sun,Hui Yang

DOI: https://doi.org/10.1063/5.0049706

IF: 4

2021-06-14

Applied Physics Letters

Abstract:This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The electrical leakage characteristics in the vertical GaN-on-Si SBD without edge termination sequentially go through the thermionic field emission, variable range hopping (VRH), and trap-assisted tunneling conduction mechanisms as the reverse bias increases gradually. Its leakage and breakdown mechanisms are limited by the edge electric field crowding effect. While for the vertical GaN-on-Si SBD with ArIT (ArIT-SBD), the electrons conduction at a low reverse bias, following the space-charge-limited conduction (SCLC) model, is limited by the damage-induced traps in the implanted GaN. As the reverse bias increases up to the occurrence of breakdown, the VRH and SCLC dominate the leakage mechanism of the ArIT-SBD, which stem from intrinsic traps in GaN grown on Si. A rapidly growing leakage under a low reverse bias and enhanced breakdown voltage performance in the ArIT-SBD is attributed to the charging of the damage-induced traps in implanted GaN. This Letter not only gives in-depth insights of vertical GaN-on-Si SBDs but also provides a useful design guidance of implanted termination for high-voltage power devices.

physics, applied
Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates

Yuan Ren,Zhiyuan He,Bin Dong,Changan Wang,Zhaohui Zeng,Qixin Li,Zhitao Chen,Liuan Li,Ningyang Liu

DOI: https://doi.org/10.1016/j.jallcom.2021.162817

IF: 6.2

2022-03-01

Journal of Alloys and Compounds

Abstract:This work focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes (SBDs) fabricated on GaN bulk substrates with different crystal orientations. For the SBDs on a-plane, m-plane, and s5-plane GaN, the Schottky barrier heights (SBHs) exhibited magnitudes of 0.65 eV, 0.69 eV, and 0.75 eV, respectively. The relatively small SBH of a-plane devices results in a relatively larger reverse leakage current than that of m-plane and s5-plane. In addition, the carrier concentrations extracted by C–V characteristics are comparable for the GaN substrates with different crystal orientations. The temperature-dependent I–V characteristics indicate how the barrier inhomogeneity of the Ni/GaN Schottky contacts on the a-plane GaN is smaller than the others. Based on the XPS spectra results, the discrepancy in Schottky contact characteristics stems from the different polarization charges and/or surface oxides of the different crystal planes. The low GaOx density on a-plane GaN surface contributes to the minimum barrier inhomogeneity of the corresponding SBD devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Xing Lü,Chao Liu,Huaxing Jiang,Xinbo Zou,Anping Zhang,Kei May Lau

DOI: https://doi.org/10.7567/apex.9.031001

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:We report on a study of AlGaN/GaN heterostructure lateral Schottky barrier diodes (L-SBDs) grown on a bulk GaN substrate. The L-SBDs exhibited an ultralow reverse leakage current below 10 −6 A/cm 2 without employing any extra treatments, which was over 4 orders of magnitude lower than that of a reference device on a sapphire substrate. The superior performance was attributed to the high crystalline quality of the heterostructure achieved by homoepitaxy. The comparison also revealed that the absence of high-density trap states in the homoepitaxial L-SBD grown on the bulk GaN substrate played a key role in achieving a low reverse leakage current.
Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Mohammed El Amrani,Julien Buckley,Thomas Kaltsounis,David Plaza Arguello,Hala El Rammouz,Daniel Alquier,Matthew Charles

DOI: https://doi.org/10.3390/cryst14060553

IF: 2.7

2024-06-15

Crystals

Abstract:In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing up to 10 V, electrons gained enough energy to excite into trap states, leading to the dominance of Frenkel–Poole emission (FPE). For a higher voltage range (−10 V to −40 V), the increased electric field facilitated the hopping of electrons along the continuum threading dislocations in the "bulk" GaN layers, and thus, variable range hopping became the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction transport on pseudo-vertical GaN-on-Si Schottky barrier diodes (SBDs) grown by localized epitaxy.

materials science, multidisciplinary,crystallography
Origin of Leakage Current in Vertical GaN Devices with Nonplanar Regrown P-Gan

Ming Xiao,Xiaodong Yan,Jinqiao Xie,Edward Beam,Yu Cao,Han Wang,Yuhao Zhang

DOI: https://doi.org/10.1063/5.0021374

IF: 4

2020-01-01

Applied Physics Letters

Abstract:This work demonstrates large-area vertical GaN-on-GaN Schottky barrier diodes (SBDs) with different p-GaN terminations fabricated by the p-GaN regrowth on planar and nonplanar n-GaN structures and studies the leakage current in these regrown p-GaN terminations. The SBDs with planar p-GaN terminations demonstrate a higher breakdown voltage than the non-terminated SBDs. In contrast, the SBDs with nonplanar regrown terminations exhibit a significantly higher leakage current, which agrees with the tunneling behavior. The microscopic current mapping and local current–voltage (I–V) spectra are acquired using conductive atomic force microscopy (C-AFM) in the nonplanar regrown junction region. The local leakage currents and conduction types are derived from the I–V characteristics of the Schottky barrier between the metalized C-AFM tip and GaN. The dominant leakage path is revealed to be the tunneling across the Schottky barrier to the regrowth sidewall assisted by high-concentration interfacial impurities, followed by current flow along the regrowth sidewall. An ∼0.7 μm-wide n-type compensation layer is found next to the non-polar regrowth sidewall, which does not directly induce a major leakage path but moves the p-GaN away from the regrowth interface, thus weakening the p-GaN depletion of the sidewall interfacial impurities as well as facilitating the formation of a crowded electric field and tunneling at the Schottky contact to the regrowth region.
Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Sen Huang,Bo Shen,Fu-Jun Xu,Fang Lin,Zhen-Lin Miao,Jie Song,Lin Lu,Long-Bin Cen,Li-Wen Sang,Zhi-Xin Qin,Zhi-Jian Yang,Guo-Yi Zhang

DOI: https://doi.org/10.1088/0268-1242/24/5/055005

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by a thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy and deep level transient spectroscopy. It is found that the HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density decreases to 1.1 x 10(-4) A cm(-2) when the growth time of the AlN interlayer increases from 0 to 10 s, and then changes to increase with increasing growth time. Correspondingly, the heterostructure with the AlN growth time of 10 s has the least number of surface pinholes. The thickness of the HT AlN also influences the density of electron traps with the activation energy of 0.762 eV in an Al0.25Ga0.75N barrier. It is suggested that the HT AlN interlayer adjusts the microstructure and the defect state density in the Al1-xGaxN barrier, and the leakage via these defect states makes the main contribution to the leakage current in SCs to Al1-xGaxN/GaN heterostructures.
Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Zhehan Yu,Yijun Dai,Ke Tang,Tian Luo,Shengli Qi,Smriti Singh,Lu Huang,Jichun Ye,Biplab Sarkar,Wei Guo

DOI: https://doi.org/10.3390/electronics13091679

IF: 2.9

2024-04-27

Electronics

Abstract:We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor.

engineering, electrical & electronic,computer science, information systems,physics, applied
Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Jieying Wang,Hong Zhou,Jincheng Zhang,Zhihong Liu,Shengrui Xu,Qian Feng,Jing Ning,Chunfu Zhang,Peijun Ma,Jinfeng Zhang,Yue Hao

DOI: https://doi.org/10.1063/5.0041305

IF: 4

2021-01-01

Applied Physics Letters

Abstract:In this paper, high performance lateral Al0.85Ga0.15N Schottky barrier diodes (SBDs) with a field-plate structure and a heavily doped GaN cap layer in the Ohmic region are demonstrated. Employing Al0.85Ga0.15N rather than AlN for the channel layer effectively reconciles the tension between electron mobility and dopant activation caused by AlN material dilemma. The lateral Al0.85Ga0.15N SBD with an anode-cathode spacing (LAC) of 20 μm achieves a specific on-resistance (Ron,sp) of 0.19 Ω·cm2 and a breakdown voltage exceeding 3 kV, rendering Baliga's power figure of merit of more than 47 MW/cm2, which is the highest value among all AlN- or Al-rich-AlGaN (Al ratio > 70%)-based diodes. Reverse leakage current mechanisms of Al0.85Ga0.15N SBDs are dominated by a variable range of hopping and trap-assisted space charge-limited conduction before destructive breakdown occurs in the field-plate oxide, which are verified by analyzing the reverse leakage characteristics. Combined with the stable performance with temperature up to 275 °C, the Al0.85Ga0.15N SBD shows great promise for next--generation high power electronics applications after further resolving the Ohmic and electron mobility issues.
Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Vishwajeet Maurya,Julien Buckley,Daniel Alquier,Mohamed-Reda Irekti,Helge Haas,Matthew Charles,Marie-Anne Jaud,Veronique Sousa

DOI: https://doi.org/10.3390/en16145447

IF: 3.2

2023-07-18

Energies

Abstract:We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured JR-VR-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

energy & fuels
Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Rong Jiang,Dawei Yan,Hai Lu,Rong Zhang,Dunjun Chen,Youdou Zheng

DOI: https://doi.org/10.1007/s11434-014-0152-6

2014-01-01

Abstract:The reverse leakage characteristics of AlGaN-based ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage ( I – V ) measurement from 300 to 450 K. At low-reverse bias range (0–0.5 V), the reverse leakage current exhibits tunneling characteristics. Meanwhile, under a more negative reverse bias range (>0.5 V), the log( I )–log( V ) plots exhibit close-to-linear dependency, which is in good agreement with the transport mechanism of space-charge limited current. A phenomenological leakage current model focusing on electron transmission primarily through continuous defect band formed by linear defects like dislocations is suggested to explain the reverse current–voltage characteristics.
Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Jiayue Xu,Xuan Liu,Bing Xie,Yilong Hao,Cheng P. Wen,Jin Wei,Maojun Wang

DOI: https://doi.org/10.1109/ted.2023.3241260

2023-01-01

Abstract:This work focuses on the bias-dependent reverse leakage current and carrier depletion process of vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with fluorine ion-implanted guard rings (GRs). The reverse leakage characteristics in the vertical GaN SBD with GRs sequentially go through ohmic conduction, thermionic field emission (TFE), and space charge limited conduction (SCLC) model as the reverse bias increases gradually. Once the traps in the implanted termination region are fully ionized, the device will undergo large leakage current at high biases. Compared with infinite area ion implanted edge termination (ET), ion-implanted GR can effectively reduce the leakage current at low biases. In addition, there are kinks in the reverse current–voltage curves, which proved to be related to the electric field spreading effect of individual GR. Based on the analysis of reverse leakage current, the electric field modulation mechanism of ion-implanted GRs is reviewed.
Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Liu Cheng,Li Ming,Wen Zhang,Gu Zhao-Yuan,Yang Ming-Chao,Liu Wei-Hua,Han Chuan-Yu,Zhang Yong,Geng Li,Hao Yue

DOI: https://doi.org/10.7498/aps.71.20211917

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:Quasi-vertical GaN barrier Schottky diodes have attracted much attention due to their low cost and high current transfer capability. The main problem is that the reverse characteristics of the devices may not be well estimated, which affects the design of the diodes. In this paper, the defects of GaN materials and the leakage related tunneling mechanisms accompanied with other mechanisms are considered. Based on the established composite device models, the reverse leakage current is simulated which is well consistent with the recent experimental result. With the assistance of the proposed models, several field plate structures are discussed and simulated to obtain a quasi-vertical GaN barrier Schottky diode with high breakdown voltage. The major leakage mechanisms are also analyzed according to the relation among leakage current, temperature and electric field at various reverse voltages. High BFOM up to 73.81 MW/cm(2) is achieved by adopting the proposed stepped field plate structure.
Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Qifeng Shan,David S. Meyaard,Qi Dai,Jaehee Cho,E. Fred Schubert,Joong Kon Son,Cheolsoo Sone

DOI: https://doi.org/10.1063/1.3668104

IF: 4

2011-01-01

Applied Physics Letters

Abstract:The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current–voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally assisted multi-step tunneling model. The thermal activation energies (95–162 meV), extracted from the Arrhenius plot in the high-temperature range, indicate a thermally activated tunneling process. Additional room temperature capacitance–voltage measurements are performed to obtain information on the depletion width and doping concentration of the LED.
Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Wang Xiao-Feng,Shao Zhen-Guang,Chen Dun-Jun,Lu Hai,Zhang Rong,Zheng You-Dou

DOI: https://doi.org/10.1088/0256-307x/31/5/057303

2014-01-01

Chinese Physics Letters

Abstract:We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300–485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I–V characteristics using different current transport models, we find that the tunneling current model can describe generally the I–V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I–V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.
Three Orders of Reverse Leakage Reduction by Using Supercritical CO2 Nitriding Process on GaN Quasi-Vertical Schottky Barrier Diode

Jiang Liu,Mingchao Yang,Cheng Liu,Weihua Liu,Chuanyu Han,Yong Zhang,Li Geng,Yue Hao

DOI: https://doi.org/10.1109/ted.2020.3039476

2021-01-01

Abstract:Surface treatment is quite vital to reduce the reverse leakage current and improve the current On-Off ratio of gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). In this work, we report a new nondestructive low temperature supercritical CO2 fluid (SCF) nitridation technology to treat the surface of GaN and substantially reduce the leakage current of GaN quasi-vertical SBD. The X-ray photoelectron spectroscopy (XPS) reveals the increased nitriding degree and oxygen doping degree in the form of GaOx after the SCF process results in the leakage performance improvement. As a result, the defects at metal/semiconductor interface are passivated. Also, because of NH-2 and OH- generated from the SCF process, the surface peak electric field of n-GaN decreases, and thus the breakdown voltage is enhanced. The reverse leakage current density is reduced by more than three orders of magnitude from 3.7 × 10 -6 to 3.52 × 10 -9 A/cm 2 (at -3 V) and the ON-/OFF-current ratio is improved by three orders from 8 × 10 7 to 5.74 × 10 10 .

Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Origin of Leakage Current in Vertical GaN Devices with Nonplanar Regrown P-Gan

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Three Orders of Reverse Leakage Reduction by Using Supercritical CO2 Nitriding Process on GaN Quasi-Vertical Schottky Barrier Diode