Abstract:The effects of different substrates on the off-state leakage current in gallium nitride (GaN) planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current–voltage characteristics. The two devices exhibit different leakage mechanisms despite being subjected to the same process conditions. The device with a sapphire substrate shows a more intricate leakage mechanism, implying the presence of additional leakage channels compared to the device with free-standing substrates. The electrical leakage characteristics in the planar GaN-on-sapphire device (referred to as utemp-SBD) and GaN substrate device (referred to as usub-SBD) Schottky barrier diodes (SBD) can be described by two distinct processes as the reverse bias gradually increases: utemp-SBD go through the thermionic emission (TE), variable range hopping (VRH), Frenkel–Poole (FP) emission and space-charge-limited conduction (SCLC) model; The leakage conduction mechanism of usub-SBD include TE, VRH, and FP emission mechanisms. It is noteworthy that in device 1, there is a rapid increase in leakage current within the voltage range of −36 to −40 V, primarily driven by the SCLC mechanism. This effect arises due to the presence of intrinsic traps in GaN grown on a heterogeneous substrate. Additionally, in the voltage range of −7 to −50 V (348 K to 448 K), the leakage mechanism shifts from FP emission to the VRH model, possibly due to variations in the Schottky barrier height.This study provides an in-depth analysis of the leakage mechanisms observed on different substrates and offers valuable insights for the design of planar gate transistors to minimize or avoid the occurrence of leakage channels.

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

On the Reverse Gate Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Forward Tunneling Current in Gan-Based Blue Light-Emitting Diodes

Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

Forward leakage currents in GaN p-i-n diodes

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Microanalyses of the Reverse-Bias Leakage Current Increase in the Laser Lift off GaN-based Light Emitting Diodes

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes