Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Forward Tunneling Current in Gan-Based Blue Light-Emitting Diodes

Temperature‐dependent Ac Current‐voltage‐capacitance Characteristics of GaN‐based Light‐emitting Diodes under High Forward Bias

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

A Differential Carrier Lifetime Analysis on GaN-based LED’s Quantum Efficiency

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

Forward leakage currents in GaN p-i-n diodes

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

A Gan-Algan-Ingan Last Quantum Barrier in an Ingan/Gan Multiple-Quantum-Well Blue Led

Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures