Abstract:An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530nm and 0.08 for those emitting at 555nm are determined. Those values hold for the high current density of 50A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16lm/W. At 780A/cm2 we obtain 22lm when measured through the substrate only. The 555nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Characterization of GaInN/GaN layers for green emitting laser diodes

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

Optical Properties of Ultra-Thin Inn Layer Embedded in Ingan Matrix for Light Emitters

Highly efficient optical transition between excited states in wide InGaN quantum wells

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Study on the Self-Absorption of InGaN Quantum Wells at High Photon Density.

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

HOW DO WE LOSE EXCITATION IN THE GREEN?

Photon Modulated Electroluminescence of Gainn/Gan Multiple Quantum Well Light Emitting Diodes

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer