Abstract:An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530nm and 0.08 for those emitting at 555nm are determined. Those values hold for the high current density of 50A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16lm/W. At 780A/cm2 we obtain 22lm when measured through the substrate only. The 555nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Optical Properties and Exciton Localization in Ganas/Gaas

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Study on the Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Green-emitting cubic GaN/In0.16Ga0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature

Optical Properties of Ultra-Thin Inn Layer Embedded in Ingan Matrix for Light Emitters

Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

Characterization of GaInN/GaN layers for green emitting laser diodes

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures