Abstract:We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrödinger equation, both for a single-band Hamiltonian and for a non-symmetrical 6-band Hamiltonian. The deformation potential and spin-orbit interaction are taken into account. For increasing built-in field, generated by the piezoelectric polarization and by the spontaneous polarization, the energy of size quantization rises and the number of size quantized electron and hole levels in a quantum well decreases. The exciton energy spectrum is obtained using electron and hole wave functions and two-dimensional Coulomb wave functions as a basis. We have calculated the exciton oscillator strengths and identified the exciton states active in optical absorption. For different values of the Al content x, a quantitative interpretation, in a good agreement with experiment, is provided for (i) the red shift of the zero-phonon photoluminescence peaks for increasing the quantum-well width, (ii) the relative intensities of the zero-phonon and one-phonon photoluminescence peaks, found within the non-adiabatic approach, and (iii) the values of the photoluminescence decay time as a function of the quantum-well width.

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Optical Transitions In Ganas/Gaas Single Quantum Well

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microscope

Optical Properties and Exciton Localization in Ganas/Gaas

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microcope

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Optical Study of Electronic States in Gaasn

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells