Abstract:In-polarity InN/In0.7Ga0.3N multiquantum wells (MQWs) were fabricated on a thick In0.7Ga0.3N interlayer/Ga-polarity GaN template by radio-frequency plasma-assisted molecular beam epitaxy. We then investigated how the lattice relaxation and piezoelectric field in InN wells affect their structural and photoluminescence (PL) properties, respectively. It was found that the critical thickness of InN well on In0.7Ga0.3N barrier was about 1 nm. A clear PL peak shift from 1.40 to 1.95 mu m was observed depending on the InN well thickness from 0.7 to 2.0 nm. Correspondingly, PL-intensity reduction was also observed with increasing well thickness. No PL was observed for the sample with 4.1 nm thick InN wells. On the basis of theoretical estimation of transition energies in InN/In0.7Ga0.3N MQWs, it was confirmed that the quantum-confined Stark effect (QCSE) played an important role for both the observed PL peak shift and the decrease in intensity. The piezoelectric field in coherently grown InN wells was about 3 MV/cm but it was reduced to about 1-2 MV/cm for the samples with relaxed InN wells. It was confirmed that the InN wells must be thinner than the critical thickness (1 nm) in following two points: to reduce defects arising from lattice relaxation and to reduce QCSE leading to emission-peak redshift and a decrease in intensity. (C) 2007 American Institute of Physics.

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan

Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Annealing of GaN-InGaN Multi Quantum Wells: Correlation between the Bandgap and Yellow Photoluminescence

Photoluminescence from InGaN/GaN MQWs on Sapphire and Membranes Fabricated by Laser Lift‐off

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Phonon Emission by Photoexcited Carriers in InGaN/GaN Multiple Quantum Wells

Redshift and Blueshift of GaNAs/GaAs Multiple Quantum Wells Induced by Rapid Thermal Annealing

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Fabrication And Properties Of Coherent-Structure In-Polarity Inn/In0.7ga0.3n Multiquantum Wells Emitting At Around 1.55 Mu M

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells