Abstract:We reported the effect of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN∕GaN multiple quantum wells (MQWs) by photoluminescence (PL) and high-resolution x-ray diffraction techniques. The MQW samples on (0001)-plane sapphire substrates were prepared with a ramping method by metalorganic chemical deposition. It was found that the structural or interface quality of the MQW system improved as the deposition time of barrier layers increased from 10 to 14min, but lattice relaxation was still observed. The relaxation degree decreases from 33% to 6% as the deposition time increases. Temperature-dependent PL measurements from 12 to 300K indicated that the integrated PL intensities start to decay rapidly as temperature rises above 50K for the sample with the shorter deposition time, and above 100K for the sample with the longer deposition time. The luminescence thermal quenching of the two samples suggests the two nonradiative recombination centers based on a fit to Arrhenius plot of the normalized integrated PL intensity over the entire temperature range. The first centers at higher temperatures show less difference for the two samples. The second centers at lower temperatures can be attributed to the trapping of carriers at the rough interface for the sample with the shorter deposition time and to the thermal quenching of bound excitons for the sample with the longer deposition time, respectively.

Photoluminescence from InGaN/GaN MQWs on Sapphire and Membranes Fabricated by Laser Lift‐off

Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Cathodoluminescence Study of InGaN MQW Laser Diodes Using Laser Lift‐off Technique

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Localized States Emission in Type-I GaAsSb/AlGaAs Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Single Peak Deep Ultraviolet Emission and High Internal Quantum Efficiency in AlGaN Quantum Wells Grown on Large Miscut Sapphire Substrates

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

A Study Of Photoluminesence And Structure Character On Aigaas/Gaas Quantum Well Laser Material

Photoluminescence and Absorption in InGaN Films with InN Segregation

Influence of the Deposition Time of Barrier Layers on Optical and Structural Properties of High-Efficiency Green-Light-emitting InGaN∕GaN Multiple Quantum Wells

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface