Abstract:Structural and optical properties of the InGaAlAs-based multiple quantum well (MQW) 1.3μm laser structures produced on InP (001) substrates by metal organic vapor phase epitaxy (MOVPE) technique in the regime of selective area growth (SAG) have been studied. An x-ray beam of 10μm diameter generated by a microbeam high-resolution x-ray diffraction (μ-HRXRD) setup based on an imaging one-bounce capillary optic and a three-bounce channel cut Si(004) analyzer crystal has been utilized to measure the diffraction curves from MQW structures grown between oxide mask stripes. The high angular resolution achieved in our experiments allowed accurate measurements of θ–2θ scans over a broad range of angles that was necessary for utilization of fitting algorithms for quantitative analysis of the strain and thickness of individual layers in the MQW structures. The thickness and strain variations in the quantum well and the barrier layers of the MQW SAG structure have been analyzed as a function of the oxide mask width in the range of 15–140μm with the gap between the oxide masks in the range of 15–80μm. Dramatic structural changes from the perfect quality MQW’s in the SAG structures with the narrow oxide masks (less than 45μm) to the strain relaxed MQW’s in the SAG regime with the wide oxide masks (more than 50μm) have been experimentally detected. The spontaneous photoluminescence emission between 1.3 and 1.51μm from the simultaneously grown InGaAlAs-based MQW SAG laser structures have been measured. Using a combination of μ-HRXRD results with the microphotoluminescence data, the optimal SAG mask parameters for the growth of integrated InGaAlAs-based optoelectronic light-emitting components and devices have been determined.

A Study Of Photoluminesence And Structure Character On Aigaas/Gaas Quantum Well Laser Material

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Analysis of Structural Parameters on InGaAsSb/AlGaAsSb Quantum Well

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Luminescent Properties of Gaasbi/Gaas Double Quantum Well Heterostructures

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Effects of Algaas Cladding Layers on the Luminescence of Gaas/Gaas1-Xbix/Gaas Heterostructures

Analysis Of Gasb/Gaas Superlattices Structure By Photoluminescence And X-Ray Diffraction

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology