Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Su Hui,Zhang Rong,Xie Zili,Liu Bin,Li Yi,Fu Deyi,Zhao Hong,Hua Xuemei,Han Ping,Shi Yi

DOI: https://doi.org/10.3969/j.issn.1003-353x.2011.10.003

2011-01-01

Abstract:The InGaN/GaN multi-quantum well(MQW)with high indium content was grown by metal-organic chemical deposition(MOCVD).The ω-2θ curve of InGaN/GaN MQW was determined by high resolutione X-ray diffraction(HRXRD)and corresponding In composition of 28% in the well was obtained by simulating this curve.At room temperature the red-orange light emitting with the peak value of 610 nm can be obviously observed.Furthermore,temperature-dependent PL spectrum(10-300 K)demonstrates two light-emitting mechanisms at low temperature in the InGaN quantum well.The corresponding peak values are located at 610 nm and 538 nm,respectively.Due to In segregation and carrier localization effects in the InGaN/GaN MQW,the S-shaped PL peaks with increasing temperature are observed.