Abstract:Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red MQWs at the top. When high-density trench defects are introduced into the green MQWs, the upper red MQWs exhibit a significant wavelength redshift of 68 nm and approximately 6-fold luminescence enhancement compared to those without trench defects. The wavelength redshift is attributed to the increased indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects. The mechanisms behind the superior luminescent properties of red MQWs within trench defects are explored in detail. Red InGaN LEDs with an internal quantum efficiency of 16.4% are achieved by modulating the trench defects. The method of achieving InGaN-based red emission by introducing trench defects is simple and reproducible, requiring no additional substrate designs. This research provides a novel pathway toward achieving high-efficiency red InGaN LEDs.

Improvement of optical properties of InGaN-based red multiple quantum wells

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Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

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Significant Internal Quantum Efficiency Enhancement of GaN/AlGaN Multiple Quantum Wells Emitting at ~350 Nm Via Step Quantum Well Structure Design

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Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

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Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Study on the Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures