Abstract:The GaInP/Si dual junction solar cell with Quantum Well and TOPCon technology has achieved 41.91 % efficiency in the simulation model. Quantum wells are proven to enhance the short circuit current without any significant degradation of open circuit voltage. The voltage preservation measure (for minimum reduction in open circuit voltage) is applied in design of Quantum well solar cell with the improvement in short circuit current, therefore the overall efficiency of dual junction cell is enhanced. In this work, the GaInP/Si dual junction solar cell is proposed by incorporating the InP quantum wells in the p-i-n region of GaInP top cell. Also, the TOPCon technology is applied at the rear side of the bottom c-Si solar cell. The quantum well increases the absorption of sub-bandgap photon energy. The buffer layer reduces the misfits between the lattice mismatched layers and tunnel oxide provides excellent passivation mechanism to increase the open circuit voltage. The ultrathin oxide layer provides extremely high electric field as described by the MIS tunneling theory. The electron and hole bound state energy and wavefunctions provides "miniband" formation and charge carrier trapping. The formation of type-A band structure in quantum well region and excellent electron mobility results in enhanced carrier transport. The GaInP/Si integrated model achieves efficiency of 33.30 % when the quantum wells are incorporated in the top cell. When the Combination of both QWs (in top cell) and TOPCon technology (in bottom cell) is applied, the model achieves 41.95 % efficiency. This model provides an excellent route toward achieving the 45 % efficiency limit of III-V/Si dual junction 2-terminal solar cell. The industry standard Silvaco TCAD platform is used for the calculation of the performance characteristics in AM1.5G environmental condition.

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