Abstract:The refinement of interface structure in InGaAs/AlGaAs multiple quantum wells (MQWs) through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence performance. The influencing mechanisms of the GaAs insertion layer (ISL) thicknesses on the interface structure and luminescence properties of InGaAs/AlGaAs MQWs were investigated by varying the GaAs ISL thickness variations and optimizing growth parameters. In our designed InGaAs/AlGaAs MQWs structures, GaAs ISL with thickness variables of 0 nm, 0.5 nm, 1 nm, 2 nm, and 4 nm were inserted between the interfaces of the InGaAs well layer and the AlGaAs barrier layer. Through experimental characterizations. The introduction of the GaAs ISL resulted in a gradual transition of the MQWs surface morphology from a three-dimensional (3D) island structure to a typical step-flow surface morphology, leading to the reduction in surface roughness and enhancement of hetero-interfaces quality. Moreover, the GaAs ISL with thickness exceeding 2 nm effectively inhibited the segregation of indium atoms, promoting the ordering of interface alloys and decreasing the polarization degrees from 3.76 % to 2.09 %. Temperature-dependent PL measurements indicated that the GaAs ISL could reduce interface defects and the density of non-radiative recombination centers, thereby enhancing the radiative recombination efficiency of MQWs and ultimately increasing the peak intensity of photoluminescence by 3.4 times. This work is significance for understanding the luminescent properties of InGaAs/AlGaAs MQWs, which provides reference highly efficient optoelectronic devices development.

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Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Influence of GaN Buffer Layer for InN Growth

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE)

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Effect of High Temperature and Interface Treatments on Photoluminescence from InGaN/GaN Multiple Quantum Wells with Green Light Emissions

Influence of the Deposition Time of Barrier Layers on Optical and Structural Properties of High-Efficiency Green-Light-emitting InGaN∕GaN Multiple Quantum Wells

InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Optimization of Growth and Fabrication Techniques to Enhance the InGaN/GaN Multiple Quantum Well Solar Cells Performance

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells