Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Increasing the Indium Incorporation Efficiency During Ingan Layer Growth by Suppressing the Dissociation of Nh3

The study of properties of blue-green InGaN/GaN multiple quantum wells grown at different pressures

Investigation on the corrosive effect of NH 3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Influence of growth process of GaN HT buffer layer on InGaN/GaN MQWs

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior

Effect of in Incorporation Parameters on the Electroluminescence of Blue–violet InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

An InGaN/GaN single quantum well improved by surface modification of GaN films

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology

Improved Interface Quality and Luminescence Capability of InGaN/GaN Quantum Wells with Mg Pretreatment

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Enhancement of the Emission Efficiency of InGaN Films by Suppressing the Incorporation of Unintentional Gallium Atoms

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect