Abstract:The strong piezoelectric field present in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the impact and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers were fabricated with an n-type InGaN/GaN SL interlayer sample, along with a corresponding control sample. By measuring the temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, experimental results show that the introduction of an SL interlayer leads to a shorter emission wavelength and an enhanced internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively suggest that the incorporation of a superlattice interlayer can partially suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations demonstrated that the introduction of a superlattice strain layer before the growth of the multiple quantum well active region can weaken the polarization-induced built-in electric field, reduce the tilt of the energy bands in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative and non-radiative recombination, thereby achieving higher recombination efficiency and improved light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.

Effect of High Temperature and Interface Treatments on Photoluminescence from InGaN/GaN Multiple Quantum Wells with Green Light Emissions

Influence of the Deposition Time of Barrier Layers on Optical and Structural Properties of High-Efficiency Green-Light-emitting InGaN∕GaN Multiple Quantum Wells

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Study on the strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

Green-amber Emission from High Indium Content InGaN Quantum Wells Improved by Interface Modification of Semipolar (112̄2) GaN Templates