Abstract:InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Effects of Photogenerated Carriers in GaN Layers on the Photoluminescence Characteristics of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan

Effect of P-Gan Layer on the Properties of Ingan/Gan Green Light-Emitting Diodes

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Influence of p-GaN Annealing on Optical Properties of InGaN MQWs

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Effects Of Matrix Layer Composition On The Structural And Optical Properties Of Self-Organized Ingan Quantum Dots

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior

Influence of P-Gan Annealing on the Optical and Electrical Properties of InGaN/GaN MQW LEDs

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Multiple Angle Analysis of 30-Mev Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Effect of InGaN Growth Interruption on Photoluminescence Properties of an InGaN-based Multiple Quantum Well Structure

Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction