Abstract:InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.

Effects of V-pits Covering Layer Position on the Optoelectronic Performance of InGaN Green LEDs

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness

Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits